Kinetic roughening transition and missing regime transition of melt crystallized polybutene-1 tetragonal phase: growth kinetics analysis

doi:10.1007/s11705-009-0001-3

Front Chem Eng Chin

2009, Vol. 3

Issue (2) : 125-134 https://doi.org/10.1007/s11705-009-0001-3

RESEARCH ARTICLE

Kinetic roughening transition and missing regime transition of melt crystallized polybutene-1 tetragonal phase: growth kinetics analysis

Motoi YAMASHITA(

)

Department of Pharmacys, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan

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Abstract

The morphology and lateral growth rate of isotactic polybutene-1 (it-PB1) have been investigated for crystallization from the melt over a wide range of crystallization temperatures from 50 to 110°C. The morphology of it-PB1 crystals is a rounded shape at crystallization temperatures lower than 85°C, while lamellar single crystals possess faceted morphology at higher crystallization temperatures. The kinetic roughening transition occurs around 85°C. The nucleation and growth mechanism for crystallization does not work below 85°C, since the growth face is rough. However, the growth rate shows the supercooling dependence derived from the nucleation and growth mechanism. The nucleation theory seems still to work even for rough surface growth. Possible mechanisms for the crystal growth of this polymer are discussed.

Keywords isotactic polybutene-1 tetragonal phase (form Ⅱ) melt crystallization growth rate kinetic roughening morphology

Corresponding Author(s): YAMASHITA Motoi,Email:motoi-y@fc.ritsumei.ac.jp

Issue Date: 05 June 2009

Cite this article:

Motoi YAMASHITA. Kinetic roughening transition and missing regime transition of melt crystallized polybutene-1 tetragonal phase: growth kinetics analysis[J]. Front Chem Eng Chin, 2009, 3(2): 125-134.

URL:

https://academic.hep.com.cn/fcse/EN/10.1007/s11705-009-0001-3
https://academic.hep.com.cn/fcse/EN/Y2009/V3/I2/125

Tab.1 Physical properties of -PB1

Fig.1 Schematic illustration of film thickness judgment by gold interference color. When the gold color is observed as the interference color, its complementary color (blue: wave length λ≌ 480 nm) needs to be cancelled by the interference of light. In order for the blue light to be cancelled, the phase of the blue light in the reflection light from one side of the film should be shifted from that from the other side of the film by . This means that the optical path length for the reflection at the film surface is shorter than that for the reflection from inside the film by half the wave length of the blue light, /2. The difference between the optical path length for the reflection at the -PB1 film surface (A) and that for reflection at the -PB1–carbon coat boundary (B) is 2. Here, is the thickness of the -PB1 layer and is the refractive index of -PB1, which is reported to be 1.50 []. When 2 = (1/2)is satisfied, the blue light is cancelled by the interference and gold color is observed as the interference color. Using the parameters listed above, ≌ 80 nm is obtained

Fig.2 Optical micrographs of -PB1 crystallized in melt at 100°C; crossed polars. (a) 140 min and (b) 180 min after the temperature reached 100°C

Fig.3 Time dependence of radius for several crystallization temperatures. (?) 60°C, (?) 82.7°C, (●) 90.7°C (?) 100°C, (×) 110°C

Fig.4 Growth rate versus crystallization temperature . (?) this work and (●) data by Icenogle []

Fig.5 Plot of ln + /( – ) versus 1/Δ. Symbols are the same as in Fig. 4. The parameters used for the plots are as follows: = 124°C [], = –84.2°C, /= 758 []

Fig.6 Electron micrograph (a) and diffraction pattern (b) of an -PB1 single crystal grown at 100°C. (Taken from Ref. 7.) The circle in (a) shows the selected area for the diffraction. Optical micrograph (c) of -PB1 single crystals grown at 100°C (reflection).

Fig.7 Electron micrograph (a), schematic illustration (b), and diffraction pattern (c) of an -PB1 single crystal grown at 88°C. (Taken from Ref. 7).

Fig.8 In-situ optical micrograph (a) and schematic illustration (b) of an -PB1 single crystal growing at 85°C (Taken from Ref. 7). Another single crystal (c) taken at 85°C (in-situ; optical micrograph)

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