Laser ablation of block copolymers with hydrogen-bonded azobenzene derivatives

doi:10.1007/s11705-018-1735-6

Front. Chem. Sci. Eng.

2018, Vol. 12

Issue (3) : 450-456 https://doi.org/10.1007/s11705-018-1735-6

RESEARCH ARTICLE

Laser ablation of block copolymers with hydrogen-bonded azobenzene derivatives

Jintang Huang¹, Youju Huang¹(

), Si Wu^1,²(

)

¹. Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
². Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Soft Matter Chemistry, Anhui Key Laboratory of Optoelectronic Science and Technology, Innovation Centre of Chemistry for Energy Materials, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei 230026, China

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Abstract

Supramolecular assemblies (PS-b-P4VP(AzoR)) are fabricated by hydrogen-bonding azobenzene derivatives (AzoR) to poly(4-vinyl pyridine) blocks of polystyrene-block-poly(4-vinyl pyridine) (PS-b-P4VP). PS-b-P4VP(AzoR) forms phase separated nanostructures with a period of ~75–105 nm. A second length scale structure with a period of 2 µm is fabricated on phase separated PS-b-P4VP(AzoR) by laser interference ablation. Both the concentration and the substituent of AzoR in PS-b-P4VP(AzoR) affect the laser ablation process. The laser ablation threshold of PS-b-P4VP(AzoR) decreases as the concentration of AzoR increases. In PS-b-P4VP(AzoR) with different substituents (R= CN, H, and CH₃), ablation thresholds follow the trend: PS-b-P4VP(AzoCN)<PS-b-P4VP(AzoCH₃)<PS-b-P4VP(AzoH). This result indicates that the electron donor group (CH₃) and the electron acceptor group (CN) can lower the ablation threshold of PS-b-P4VP(AzoR).

Keywords laser ablation block copolymers hydrogen-bond azobenzene derivatives supramolecular assembly

Corresponding Author(s): Youju Huang,Si Wu

Just Accepted Date: 19 April 2018 Online First Date: 02 August 2018 Issue Date: 18 September 2018

Cite this article:

Jintang Huang,Youju Huang,Si Wu. Laser ablation of block copolymers with hydrogen-bonded azobenzene derivatives[J]. Front. Chem. Sci. Eng., 2018, 12(3): 450-456.

URL:

https://academic.hep.com.cn/fcse/EN/10.1007/s11705-018-1735-6
https://academic.hep.com.cn/fcse/EN/Y2018/V12/I3/450

Fig.1 Chemical structures of used materials. The azo compounds AzoR (R= CN, H, and CH₃) are hydrogen bonded to P4VP blocks of PS-b-P4VP

Fig.2 UV-vis absorption spectra of thin films of PS-b-P4VP(AzoCN)_x (x = 0.05, 0.1, 0.3, and 0.5)

Fig.3 Schematic models of PS-b-P4VP(AzoR)_x (a) before and (b) after interference irradiation. After irradiation, periodic ablated areas (interference patterns) appear on PS-b-P4VP(AzoR)_x. (c) Calculated intensity distribution (top) and profile (bottom) of three beam interference

Fig.4 AFM height images of PS-b-P4VP(AzoCN)_x with different x after exposed to interference beams. (a) x = 0.05, (b) x = 0.1, (c) x = 0.3, and (d) x = 0.5. Insets are AFM phase images, which show that phase separated nanostructures in PS-b-P4VP(AzoCN)_x; (e) profiles along the lines in (a)–(d); (f) depths and diameters of the holes generated by interference irradiation. Note: The diameters are measured at half depths of the holes

Fig.5 UV-vis absorption spectra of (a) 10^?⁵ mol?L^?¹ AzoR in THF and (b) thin films of PS-b-P4VP(AzoR)_0.5

Fig.6 (a) AFM height images of PS-b-P4VP(AzoH)_0.5 and (b) PS-b-P4VP(AzoCH₃)_0.5 after exposed to interference beams. Insets are AFM phase images of PS-b-P4VP(AzoR)_0.5. The phase separated nanostructures are clearly visible in the AFM phase images; (c) profiles along the lines in (a), (b), and Fig. 4(d); (d) depths and diameters of the holes generated by interference irradiation. Note: the diameters are measured at half depths of the holes

Tab.1 Linear absorption coefficients (a) at 355 nm and ablation thresholds of PS-b-P4VP(AzoR)_x

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