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Image adaptive RST invariant watermark using
pseudo-Zernike moments
LI Leida, GUO Baolong
Front. Electr. Electron. Eng.. 2008, 3 (1): 20-24.
https://doi.org/10.1007/s11460-008-0005-7
Rotation, scaling and translation (RST) attacks can desynchronize watermark detection, which causes failure in many watermarking systems. In this paper, an image adaptive RST invariant watermark (AWPZM) is proposed by using the rotation invariant property of pseudo-Zernike moments (PZM) and odd-even quantization. PZM of the original image is computed first, and then those suitable for watermark generation are selected. Then, magnitudes of them are odd-even quantized to generate the watermark. In detection, a normalized hamming function is employed to determine the similarity of the watermark. Experimental results show its robustness to rotation and scaling. For traditional attacks, such as JPEG compression, added noise and filtering, the similarities are all above 0.95.
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ASAR: An ant-based service-aware routing algorithm
for multimedia sensor networks
SUN Yan, MA Huadong, LIU Liang, Zheng Yu'e
Front. Electr. Electron. Eng.. 2008, 3 (1): 25-33.
https://doi.org/10.1007/s11460-008-0013-7
Aimed at three basic services (event-driven, data query and stream query), the paper presents a QoS routing model for multimedia sensor networks. Moreover, based on the traditional ant-based algorithm, we propose an ant-based service-aware routing (ASAR) algorithm. The ASAR chooses suitable paths to meet diverse QoS requirements from different kinds of services, thus maximizing network utilization and improving network performance. Finally, extensive simulation is conducted to verify the effectiveness of our solution and we give a detailed discussion on the effects of different system parameters. Compared to the typical routing algorithm in sensor networks and the traditional ant-based algorithm, our ASAR algorithm has better convergence and significantly provides better QoS for multiple types of services in the multimedia sensor networks.
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Subspace clustering through attribute clustering
NIU Kun, CHEN Junliang, ZHANG Shubo
Front. Electr. Electron. Eng.. 2008, 3 (1): 44-48.
https://doi.org/10.1007/s11460-008-0010-x
Many recently proposed subspace clustering methods suffer from two severe problems. First, the algorithms typically scale exponentially with the data dimensionality or the subspace dimensionality of clusters. Second, the clustering results are often sensitive to input parameters. In this paper, a fast algorithm of subspace clustering using attribute clustering is proposed to overcome these limitations. This algorithm first filters out redundant attributes by computing the Gini coefficient. To evaluate the correlation of every two non-redundant attributes, the relation matrix of non-redundant attributes is constructed based on the relation function of two dimensional united Gini coefficients. After applying an overlapping clustering algorithm on the relation matrix, the candidate of all interesting subspaces is achieved. Finally, all subspace clusters can be derived by clustering on interesting subspaces. Experiments on both synthesis and real datasets show that the new algorithm not only achieves a significant gain of runtime and quality to find subspace clusters, but also is insensitive to input parameters.
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Research on virtual actor action editing and
movement control
QIN Wenhu, WU Yuhui, ZHAO Zhengxu
Front. Electr. Electron. Eng.. 2008, 3 (1): 49-54.
https://doi.org/10.1007/s11460-008-0009-3
To directly use a virtual surface model for action editing and movement control, a general method for creating virtual actor skeleton models and controlling movement is presented. The method includes judging borderlines of the block virtual surface model, calculating the joints, confirming the above block, and using the block hierarchical layout to create the skeleton model. Then, according to the virtual actor model and movement restriction, the study focuses on the generation of movement animation using the key frame technique and smoothing movement technique by automatically adding animation and adjusting the actor’s pose by different weights on movement amplitude. Finally, movement control of the actor in the virtual environment is implemented by real-time control and path point control, which achieve a good result.
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Electromagnetic-scattering by bi-sphere
groups and coherent-beam scattering by homogeneous spheres
LIU Linsheng, KE Hengyu, WU Zhensen, BAI Lu
Front. Electr. Electron. Eng.. 2008, 3 (1): 70-78.
https://doi.org/10.1007/s11460-008-0019-1
By using Mie’s theory, the boundary conditions, and some advanced mathematical knowledge, the scattering problem of a plane-wave by bi-sphere groups and of cores-traversed coherent Gauss-beams by one sphere was addressed. In each, the coefficients of the scattering-field expressions were deduced. Finally, the result was predigested and transfigured so that the available form for programming was achieved. On deducing, the former adopted the undetermined coefficient method and the latter used the plane geometry method. Moreover, the complexity of the calculation was decreased here.
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A novel broadband and high-gain microstrip reflectarray
antenna with variable polarization
WU Zhihang, ZHANG Wenxun, LIU Zhenguo, SHEN Wei
Front. Electr. Electron. Eng.. 2008, 3 (1): 86-89.
https://doi.org/10.1007/s11460-008-0003-9
This article proposes a new kind of microstrip reflectarray antenna, of which the polarization could be reconfigured among all the polarization states instead of some fixed states in a dual- or multi-polarized antenna. The mechanism for polarized variability is so simple that only mechanical rotation is needed. Theoretical analysis shows that the reflected polarization covers all states and that the dual- or multi-layered unit structure sandwiched with air-gaps can broaden the bandwidth efficiently. Moreover, it is demonstrated that adopting more elements can enhance antenna gain. With these advantageous features, this kind of antenna has the potential significance for engineering applications in radar, communication, etc. In this article, a complete theoretical analysis as well as a specific design sample is given to verify this method.
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An ultra low-voltage, low-power baseband-processor
for UHF RFID tag
HE Yan, HU Jianyun, MIN Hao
Front. Electr. Electron. Eng.. 2008, 3 (1): 99-104.
https://doi.org/10.1007/s11460-008-0007-5
A novel ultra low-voltage, low-power baseband-processor for UHF radio frequency identification (RFID) tag is presented here. The baseband-processor is compatible with the EPCTM class-1 generation-2 (C1G2) UHF RFID protocol, and fits the requirements of ultra low-power of passive tags. Based on the analysis of the special power consumption of the tag, a new architecture is proposed. A novel scheme for generating pseudo-random numbers as well as a new method of partial-decoding is developed. Besides, other low-power techniques are also adopted for the special baseband-processor which implements complex functions, such as encoding/coding, anti-collision and authorization scheme, and reading/writing operation to EEPROM. The chip was fabricated in 0.35 ?m 1P3M standard CMOS process. Experimental results show that it achieves low power operation of 3.15 ?W @ 1.5 V with the core area of 1.1 mm × 0.8 mm.
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Quantitative research on higher order harmonics
in metrology beamline
ZHOU Hongjun, HUO Tonglin, ZHANG Guobin, QI Zeming, ZHENG Jinjin, ZHONG Pengfei
Front. Electr. Electron. Eng.. 2008, 3 (1): 105-109.
https://doi.org/10.1007/s11460-008-0021-7
The synchrotron radiation spectra of the spherical grating monochromator (SGM) working in the soft X-ray and VUV region are often contaminated by significant amounts of higher order harmonics. They cannot be suppressed completely by suitable filters. Higher order contributions in the spectral radiation standard and metrology beamline were researched using transmission grating (made in-house) and IRD AXUV100G (USA) photodiode detector. The exit beam was dispersed with the transmission grating behind the exit slit of the monochromator, and the contributions of the different orders were analyzed. The higher order distributions were quantitatively determined for three gratings with line densities of 1800, 600 and 200 l/mm. Experiment results show that in wavelengths between 5 nm and 15 nm the contributions of the higher orders to the detector signal are restricted to less than 7% even without the use of filters. In wavelength regions between 5 nm and 34 nm, the contributions of the higher orders to the detector signal are less than 14% with proper Al, Si3N4 and Zr filters, and after being modified by quantum efficiency of the detector, the higher order contributions are restricted to less than 6.5%. The study also shows that higher orders are almost totally suppressed by MgF2 filter when the wavelength ranges between 115–140 nm.
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Effect of the silicon substrate structure on
chip spiral inductor
XUE Chunlai, YAO Fei, CHENG Buwen, WANG Qiming
Front. Electr. Electron. Eng.. 2008, 3 (1): 110-115.
https://doi.org/10.1007/s11460-008-0017-3
In this paper, the effect of the substrate structure on the performance of the spiral inductor is investigated by the 3-D electromagnetic simulator, Ansoft high frequency structure simulator (HFSS). With variations in the substrate structure including substrate conductivity, permittivity and thickness of the dielectric layer, the performance of the inductors has been analyzed in detail. The simulation results and analyses indicate that the performance of the spiral inductor can be mostly improved by lowering the conductivity of the substrate, increasing the thickness of the dielectric layer and using the low K dielectric layer. In the mean time, some guidelines or “design rules” are summarized by the results of this study.
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Electrochemical capacitance-voltage characterization
of plasma-doped ultra-shallow junctions
WU Huizhen, RU Guoping, JIANG Yulong, QU Xinping, LI Bingzong, ZHANG Yonggang, JIN Chengguo, MIZUNO Bunji
Front. Electr. Electron. Eng.. 2008, 3 (1): 116-119.
https://doi.org/10.1007/s11460-008-0016-4
Ultra-shallow Si p+n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage (ECV). By comparing ECV results with those of secondary ion mass spectroscopy (SIMS), it is found that the dopant concentration profiles in heavily-doped p+ layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS. However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer. The ECV technique is also easy to control and reproduce. The ECV results of ultra-shallow junctions (USJ) formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with junction depth as low as 10 nm, and dopant concentration up to 1021 cm-3. Also, its depth resolution can be as fine as 1 nm. Therefore, it shows great potential in application for characterizing USJ in the sub-65 nm technology node CMOS devices.
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High performance 1 mm AlGaN/GaN HEMT based on
SiC substrate
LUO Weijun, WANG Xiaoliang, CHEN Xiaojuan, LI Chengzhan, LIU Xinyu, HE Zhijing, WEI Ke, LIANG Xiaoxin
Front. Electr. Electron. Eng.. 2008, 3 (1): 120-122.
https://doi.org/10.1007/s11460-008-0020-8
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate. Metal-organic chemical vapor deposition (MOCVD) was used to generate the epitaxy layers. Corresponding experiments show that the device has a gate length of 0.8 ?m exhibiting drain current density of 1.16 A/mm, transconductance of 241 ms/mm, a gate-drain breakdown voltage larger than 80 V, maximum current gain frequency of 20 GHz and maximum power gain frequency of 28 GHz. In addition, the power gain under the continues wave condition is 14.2 dB with a power density of 4.1 W/mm, while under the pulsed wave condition, power gain reaches 14.4 dB with power density at 5.2 W/mm. Furthermore, the two-port network impedance characteristics display great potential in microwave application.
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Study on voltage distribution in windings of
an inverter-fed traction motor
TONG Laisheng, WU Guangning, LIN Tongguang, ZHANG Guoqin, LIU Xi
Front. Electr. Electron. Eng.. 2008, 3 (1): 123-128.
https://doi.org/10.1007/s11460-008-0011-9
Voltage distribution in windings is important for inverter-fed traction motors. The analysis on voltage distribution characteristics is significant to the study of insulation failure mechanisms and structure design. First, a distribution parameter model has been developed according to the winding structure of an inverter-fed traction motor. Based on the model, finite element differential method was employed to determine voltage distribution characteristics. Simulation results were compared with actual voltage distribution. Moreover, the influence of pulse rise time and cable was discussed. The results show that the shorter the pulse rise time is, the more uneven the voltage distribution is. In addition, cable length has little influence on voltage distribution characteristics. However, the amplitude of voltage would also increase by 40% in coils and turns.
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