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Frontiers of Physics

ISSN 2095-0462

ISSN 2095-0470(Online)

CN 11-5994/O4

邮发代号 80-965

2018 Impact Factor: 2.483

Frontiers of Physics in China  2009, Vol. 4 Issue (3): 367-372    DOI: 10.1007/s11467-009-0022-x
  RESEARCH ARTICLE 本期目录 |  
Chemically decorated boron-nitride nanoribbons
Chemically decorated boron-nitride nanoribbons
Xiao-jun WU, Men-hao WU, Xiao Cheng ZENG()
Department of Chemistry and Nebraska Center for Materials and Nanoscience, University of Nebraska–Lincoln, Lincoln, NB 68588, USA
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Abstract

Motivated by recent studies of graphenen nanoribbons (GNRs), we explored electronic properties of pure and chemically modified boron nitride nanoribbons (BNNRs) using the density functional theory method. Pure BNNRs with both edges fully saturated by hydrogen are semiconducting with wide band gaps. Values of the band gap depend on the width and the type of edge. The chemical decoration of BNNRs’ edges with four different functional groups, including –F, –Cl, –OH, and –NO2, was investigated. The band-gap modulation by chemical decoration may be exploited for nanoelectronic applications.

Key wordsboron–nitride nanoribbons    chemical modification
收稿日期: 2009-01-07      出版日期: 2009-09-05
引用本文:   
. Chemically decorated boron-nitride nanoribbons[J]. Frontiers of Physics in China, 2009, 4(3): 367-372.
Xiao-jun WU, Men-hao WU, Xiao Cheng ZENG. Chemically decorated boron-nitride nanoribbons. Front Phys Chin, 2009, 4(3): 367-372.
链接本文:  
http://academic.hep.com.cn/fop/CN/10.1007/s11467-009-0022-x      或      http://academic.hep.com.cn/fop/CN/Y2009/V4/I3/367
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