Quantum spin Hall effect in inverted InAs/GaSb quantum wells

doi:10.1007/s11467-011-0204-1

Frontiers of Physics

2012, Vol. 7

Issue (2): 200-207 https://doi.org/10.1007/s11467-011-0204-1

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Quantum spin Hall effect in inverted InAs/GaSb quantum wells

Ivan Knez(

), Rui-Rui Du(

)

Department of Physics and Astronomy, Rice University, Houston, TX 77251-1892, USA

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Abstract：

We review the recent experimental progress towards observing quantum spin Hall effect in inverted InAs/GaSb quantum wells (QWs). Low temperature transport measurements in the hybridization gap show bulk conductivity of a non-trivial origin, while the length and width dependence of conductance in this regime show strong evidence for the existence of helical edge modes proposed by Liu et al. [Phys. Rev. Lett., 2008, 100: 236601]. Surprisingly, edge modes persist in spite of comparable bulk conduction and show only weak dependence on magnetic field. We elucidate that seeming independence of edge on bulk transport comes due to the disparity in Fermi-wave vectors between the bulk and the edge, leading to a total internal reflection of the edge modes.

Key words： quantum spin Hall effect InAs/GaSb quantum wells topological insulators

收稿日期: 2011-05-03 出版日期: 2012-04-01

Corresponding Author(s): Knez Ivan,Email:ik5@rice.edu; Du Rui-Rui,Email:rrd@rice.edu

引用本文:

. Quantum spin Hall effect in inverted InAs/GaSb quantum wells[J]. Frontiers of Physics, 2012, 7(2): 200-207.
Ivan Knez, Rui-Rui Du. Quantum spin Hall effect in inverted InAs/GaSb quantum wells. Front. Phys. , 2012, 7(2): 200-207.

链接本文:

https://academic.hep.com.cn/fop/CN/10.1007/s11467-011-0204-1
https://academic.hep.com.cn/fop/CN/Y2012/V7/I2/200

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