Transport evidence of 3D topological nodal-line semimetal phase in ZrSiS
Junran Zhang1, Ming Gao1, Jinglei Zhang2, Xuefeng Wang1(), Xiaoqian Zhang1, Minhao Zhang1, Wei Niu1, Rong Zhang1, Yongbing Xu1,3()
1. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China 2. High Magnetic Field Laboratory of Chinese Academy of Sciences, Hefei 230031, China 3. York-Nanjing Joint Centre (YNJC) for Spintronics and Nano Engineering, Department of Electronics, University of York, YO10 3DD, United Kingdom
Topological nodal-line semimetal is a new emerging material, which is viewed as a three-dimensional (3D) analog of graphene with the conduction and valence bands crossing at Dirac nodes, resulting in a range of exotic transport properties. Herein, we report on the direct quantum transport evidence of the 3D topological nodal-line semimetal phase of ZrSiS with angular-dependent magnetoresistance (MR) and the combined de Hass-van Alphen (dHvA) and Shubnikov-de Hass (SdH) oscillations. Through fitting by a two-band model, the MR results demonstrate high topological nodal-line fermion densities of approximately 6×1021 cm−3 and a perfect electron/hole compensation ratio of 0.94, which is consistent with the semi-classical expression fitting of Hall conductance Gxy and the theoretical calculation. Both the SdH and dHvA oscillations provide clear evidence of 3D topological nodal-line semimetal characteristic.
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