Kostya S. Novoselov1,2(), Daria V. Andreeva3, Wencai Ren4, Guangcun Shan5
1. School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom 2. National Graphene Institute, University of Manchester, Manchester M13 9PL, United Kingdom 3. Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore 4. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China 5. School of Instrumentation Science and Opto-electronics Engineering, Beihang University, Beijing 100191, China
K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Electric field effect in atomically thin carbon films, Science 306(5696), 666 (2004) https://doi.org/10.1126/science.1102896
A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, The electronic properties of graphene, Rev. Mod. Phys. 81(1), 109 (2009) https://doi.org/10.1103/RevModPhys.81.109
4
K. S. Novoselov, V. I. Fal′ko, L. Colombo, P. R. Gellert, M. G. Schwab, and K. Kim, A roadmap for graphene, Nature 490(7419), 192 (2012) https://doi.org/10.1038/nature11458
5
A. C. Ferrari, F. Bonaccorso, V. Fal’ko, K. S. Novoselov, S. Roche, et al., Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, Nanoscale 7(11), 4598 (2015) https://doi.org/10.1039/C4NR01600A
M. Hu, N. Zhang, G. Shan, J. Gao, J. Liu, and R. K. Y. Li, Two-dimensional materials: Emerging toolkit for construction of ultrathin high-efficiency microwave shield and absorber, Front. Phys. 13(4), 138113 (2018) https://doi.org/10.1007/s11467-018-0809-8
8
R. Wang, X. Ren, Z. Yan, L. J. Jiang, W. E. I. Sha, and G. C. Shan, Graphene based functional devices: A short review, Front. Phys. 14, 13603 (2019) https://doi.org/10.1007/s11467-018-0859-y
K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Twodimensional atomic crystals, Proc. Natl. Acad. Sci. USA 102(30), 10451 (2005) https://doi.org/10.1073/pnas.0502848102
11
A. H. C. Neto and K. Novoselov, New directions in science and technology: Two-dimensional crystals, Rep. Prog. Phys. 74(8), 082501 (2011) https://doi.org/10.1088/0034-4885/74/8/082501
12
Y. Cao, A. Mishchenko, G. L. Yu, E. Khestanova, A. P. Rooney, E. Prestat, A. V. Kretinin, P. Blake, M. B. Shalom, C. Woods, J. Chapman, G. Balakrishnan, I. V. Grigorieva, K. S. Novoselov, B. A. Piot, M. Potemski, K. Watanabe, T. Taniguchi, S. J. Haigh, A. K. Geim, and R. V. Gorbachev, Quality heterostructures from twodimensional crystals unstable in air by their assembly in inert atmosphere, Nano Lett. 15(8), 4914 (2015) https://doi.org/10.1021/acs.nanolett.5b00648
13
D. Zhong, K. L. Seyler, X. Linpeng, R. Cheng, N. Sivadas, B. Huang, E. Schmidgall, T. Taniguchi, K. Watanabe, M. A. McGuire, W. Yao, D. Xiao, K. M. C. Fu, and X. Xu, Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics, Sci. Adv. 3(5), e1603113 (2017) https://doi.org/10.1126/sciadv.1603113
14
S. Jiang, L. Li, Z. Wang, K. F. Mak, and J. Shan, Controlling magnetism in 2D CrI3 by electrostatic doping, Nat. Nanotechnol. 13(7), 549 (2018) https://doi.org/10.1038/s41565-018-0135-x
15
D. Ghazaryan, M. T. Greenaway, Z. Wang, V. H. Guarochico-Moreira, I. J. Vera-Marun, J. Yin, Y. Liao, S. V. Morozov, O. Kristanovski, A. I. Lichtenstein, M. I. Katsnelson, F. Withers, A. Mishchenko, L. Eaves, A. K. Geim, K. S. Novoselov, and A. Misra, Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3, Nature Electron. 1(6), 344 (2018) https://doi.org/10.1038/s41928-018-0087-z
16
K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Atomically thin MoS2: A new direct-gap semiconductor, Phys. Rev. Lett. 105(13), 136805 (2010) https://doi.org/10.1103/PhysRevLett.105.136805
17
T. LaMountain, E. J. Lenferink, Y. J. Chen, T. K. Stanev, and N. P. Stern, Environmental engineering of transition metal dichalcogenide optoelectronics, Front. Phys. 13(4), 138114 (2018) https://doi.org/10.1007/s11467-018-0795-x
18
D. H. Deng, K. S. Novoselov, Q. Fu, N. Zheng, Z. Tian, and X. Bao, Catalysis with two-dimensional materials and their heterostructures, Nat. Nanotechnol. 11(3), 218 (2016) https://doi.org/10.1038/nnano.2015.340
19
J. Deng, H. Li, S. Wang, D. Ding, M. Chen, C. Liu, Z. Tian, K. S. Novoselov, C. Ma, D. Deng, and X. Bao, Multiscale structural and electronic control of molybdenum disulfide foam for highly efficient hydrogen production, Nat. Commun. 8, 14430 (2017) https://doi.org/10.1038/ncomms14430
C. Dean, A. F. Young, L. Wang, I. Meric, G. H. Lee, K. Watanabe, T. Taniguchi, K. Shepard, P. Kim, and J. Hone, Graphene based heterostructures, Solid State Commun. 152(15), 1275 (2012) https://doi.org/10.1016/j.ssc.2012.04.021
23
K. S. Novoselov and A. H. C. Neto, Two-dimensional crystals-based heterostructures: Materials with tailored properties, Phys. Scr. T 146, 014006 (2012) https://doi.org/10.1088/0031-8949/2012/T146/014006
24
K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, 2D materials and van der Waals heterostructures, Science 353(6298), aac9439 (2016) https://doi.org/10.1126/science.aac9439
25
C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Boron nitride substrates for highquality graphene electronics, Nat. Nanotechnol. 5(10), 722 (2010) https://doi.org/10.1038/nnano.2010.172
26
X. Du, I. Skachko, A. Barker, and E. Y. Andrei, Approaching ballistic transport in suspended graphene, Nat. Nanotechnol. 3(8), 491 (2008) https://doi.org/10.1038/nnano.2008.199
27
X. Du, I. Skachko, F. Duerr, A. Luican, and E. Y. Andrei, Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene, Nature 462(7270), 192 (2009) https://doi.org/10.1038/nature08522
28
K. I. Bolotin, F. Ghahari, M. D. Shulman, H. L. Stormer, and P. Kim, Observation of the fractional quantum Hall effect in graphene, Nature 462(7270), 196 (2009) https://doi.org/10.1038/nature08582
29
A. S. Mayorov, D. C. Elias, I. S. Mukhin, S. V. Morozov, L. A. Ponomarenko, K. S. Novoselov, A. K. Geim, and R. V. Gorbachev, How close can one approach the Dirac point in graphene experimentally? Nano Lett. 12(9), 4629 (2012) https://doi.org/10.1021/nl301922d
30
Y. Q. Bie, G. Grosso, M. Heuck, M. M. Furchi, Y. Cao, J. Zheng, D. Bunandar, E. Navarro-Moratalla, L. Zhou, D. K. Efetov, T. Taniguchi, K. Watanabe, J. Kong, D. Englund, and P. Jarillo-Herrero, A MoTe2-based lightemitting diode and photodetector for silicon photonic integrated circuits, Nat. Nanotechnol. 12(12), 1124 (2017) https://doi.org/10.1038/nnano.2017.209
31
R. V. Gorbachev, A. K. Geim, M. I. Katsnelson, K. S. Novoselov, T. Tudorovskiy, I. V. Grigorieva, A. H. Mac-Donald, S. V. Morozov, K. Watanabe, T. Taniguchi, and L. A. Ponomarenko, Strong Coulomb drag and broken symmetry in double-layer graphene, Nat. Phys. 8(12), 896 (2012)
32
X. Liu, et al.., Coulomb drag and exciton condensation in graphene double-layer heterostructures, Front. Phys. doi: 10.1007/s11467-018-0838-3
33
F. Amet, J. R. Williams, A. G. F. Garcia, M. Yankowitz, K. Watanabe, T. Taniguchi, and D. Goldhaber-Gordon, Tunneling spectroscopy of graphene-boron-nitride heterostructures, Phys. Rev. B 85(7), 073405 (2012) https://doi.org/10.1103/PhysRevB.85.073405
34
G. H. Lee, Y. J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, Electron tunneling through atomically flat and ultrathin hexagonal boron nitride, Appl. Phys. Lett. 99(24), 243114 (2011) https://doi.org/10.1063/1.3662043
35
L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. Castro Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, Electron tunneling through ultrathin boron nitride crystalline barriers, Nano Lett. 12(3), 1707 (2012) https://doi.org/10.1021/nl3002205
36
L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko, Fieldeffect tunneling transistor based on vertical graphene heterostructures, Science 335(6071), 947 (2012) https://doi.org/10.1126/science.1218461
37
H. Yang, J. Heo, S. Park, H. J. Song, D. H. Seo, K. E. Byun, P. Kim, I. Yoo, H. J. Chung, and K. Kim, Graphene barristor, a triode device with a gate-controlled Schottky barrier, Science 336(6085), 1140 (2012) https://doi.org/10.1126/science.1220527
38
L. Britnell, R. V. Gorbachev, A. K. Geim, L. A. Ponomarenko, A. Mishchenko, M. T. Greenaway, T. M. Fromhold, K. S. Novoselov, and L. Eaves, Resonant tunnelling and negative differential conductance in graphene transistors, Nat. Commun. 4(1), 1794 (2013) https://doi.org/10.1038/ncomms2817
39
A. Mishchenko, J. S. Tu, Y. Cao, R. V. Gorbachev, J. R. Wallbank, M. T. Greenaway, V. E. Morozov, S. V. Morozov, M. J. Zhu, S. L. Wong, F. Withers, C. R. Woods, Y. J. Kim, K. Watanabe, T. Taniguchi, E. E. Vdovin, O. Makarovsky, T. M. Fromhold, V. I. Fal’ko, A. K. Geim, L. Eaves, and K. S. Novoselov, Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures, Nat. Nanotechnol. 9(10), 808 (2014) https://doi.org/10.1038/nnano.2014.187
40
M. T. Greenaway, E. E. Vdovin, A. Mishchenko, O. Makarovsky, A. Patanè, J. R. Wallbank, Y. Cao, A. V. Kretinin, M. J. Zhu, S. V. Morozov, V. I. Fal’ko, K. S. Novoselov, A. K. Geim, T. M. Fromhold, and L. Eaves, Resonant tunnelling between the chiral Landau states of twisted graphene lattices, Nat. Phys. 11(12), 1057 (2015)
41
J. R. Wallbank, D. Ghazaryan, A. Misra, Y. Cao, J. S. Tu, B. A. Piot, M. Potemski, S. Pezzini, S. Wiedmann, U. Zeitler, T. L. M. Lane, S. V. Morozov, M. T. Greenaway, L. Eaves, A. K. Geim, V. I. Fal’ko, K. S. Novoselov, and A. Mishchenko, Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures, Science 353(6299), 575 (2016) https://doi.org/10.1126/science.aaf4621
42
U. Chandni, K. Watanabe, T. Taniguchi, and J. P. Eisenstein, Evidence for defect-mediated tunneling in hexagonal boron nitride-based junctions, Nano Lett. 15(11), 7329 (2015) https://doi.org/10.1021/acs.nanolett.5b02625
43
E. E. Vdovin, A. Mishchenko, M. T. Greenaway, M. J. Zhu, D. Ghazaryan, A. Misra, Y. Cao, S. V. Morozov, O. Makarovsky, T. M. Fromhold, A. Patanè, G. J. Slotman, M. I. Katsnelson, A. K. Geim, K. S. Novoselov, and L. Eaves, Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors, Phys. Rev. Lett. 116(18), 186603 (2016) https://doi.org/10.1103/PhysRevLett.116.186603
44
U. Chandni, K. Watanabe, T. Taniguchi, and J. P. Eisenstein, Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions, Nano Lett. 16(12), 7982 (2016) https://doi.org/10.1021/acs.nanolett.6b04369
45
L. A. Ponomarenko, R. V. Gorbachev, G. L. Yu, D. C. Elias, R. Jalil, A. A. Patel, A. Mishchenko, A. S. Mayorov, C. R. Woods, J. R. Wallbank, M. Mucha-Kruczynski, B. A. Piot, M. Potemski, I. V. Grigorieva, K. S. Novoselov, F. Guinea, V. I. Fal’ko, and A. K. Geim, Cloning of Dirac fermions in graphene superlattices, Nature 497(7451), 594 (2013) https://doi.org/10.1038/nature12187
46
C. R. Dean, L. Wang, P. Maher, C. Forsythe, F. Ghahari, Y. Gao, J. Katoch, M. Ishigami, P. Moon, M. Koshino, T. Taniguchi, K. Watanabe, K. L. Shepard, J. Hone, and P. Kim, Hofstadter’s butterfly and the fractal quantum Hall effect in moire superlattices, Nature 497(7451), 598 (2013) https://doi.org/10.1038/nature12186
47
B. Hunt, J. D. Sanchez-Yamagishi, A. F. Young, M. Yankowitz, B. J. LeRoy, K. Watanabe, T. Taniguchi, P. Moon, M. Koshino, P. Jarillo-Herrero, and R. C. Ashoori, Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure, Science 340(6139), 1427 (2013) https://doi.org/10.1126/science.1237240
48
G. L. Yu, R. V. Gorbachev, J. S. Tu, A. V. Kretinin, Y. Cao, R. Jalil, F. Withers, L. A. Ponomarenko, B. A. Piot, M. Potemski, D. C. Elias, X. Chen, K. Watanabe, T. Taniguchi, I. V. Grigorieva, K. S. Novoselov, V. I. Fal’ko, A. K. Geim, and A. Mishchenko, Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices, Nat. Phys. 10(7), 525 (2014)
49
L. Wang, Y. Gao, B. Wen, Z. Han, T. Taniguchi, K. Watanabe, M. Koshino, J. Hone, and C. R. Dean, Evidence for a fractional fractal quantum Hall effect in graphene superlattices, Science 350(6265), 1231 (2015) https://doi.org/10.1126/science.aad2102
50
R. Krishna Kumar, X. Chen, G. H. Auton, A. Mishchenko, D. A. Bandurin, et al.., High-temperature quantum oscillations caused by recurring Bloch states in graphene superlattices, Science 357(6347), 181 (2017) https://doi.org/10.1126/science.aal3357
51
H. Fang, C. Battaglia, C. Carraro, S. Nemsak, B. Ozdol, J. S. Kang, H. A. Bechtel, S. B. Desai, F. Kronast, A. A. Unal, G. Conti, C. Conlon, G. K. Palsson, M. C. Martin, A. M. Minor, C. S. Fadley, E. Yablonovitch, R. Maboudian, and A. Javey, Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides, Proc. Natl. Acad. Sci. USA 111(17), 6198 (2014) https://doi.org/10.1073/pnas.1405435111
52
Y. Liu, H. Zhang, Y. Zhou, F. Ran, W. Zhao, L. Wang, C. Pei, J. Zhang, X. Huang, and H. Li, Probing interlayer interactions in WSe2-graphene heterostructures by ultralow frequency Raman spectroscopy, Front. Phys. 14, 13607 (2019) https://doi.org/10.1007/s11467-018-0854-3
53
C. H. Lee, G. H. Lee, A. M. van der Zande, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Guo, J. Hone, and P. Kim, Atomically thin p-n junctions with van der Waals heterointerfaces, Nat. Nanotechnol. 9(9), 676 (2014) https://doi.org/10.1038/nnano.2014.150
54
F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, Photodetectors based on graphene, other two-dimensional materials and hybrid systems, Nat. Nanotechnol. 9(10), 780 (2014) https://doi.org/10.1038/nnano.2014.215
55
Z. Z. Yan, Z. H. Jiang, J. P. Lu, and Z. H. Ni, Interfacial charge transfer in WS2 monolayer/CsPbBr3 microplate heterostructure, Front. Phys. 13(4), 138115 (2018) https://doi.org/10.1007/s11467-018-0785-z
56
Y. Guo, N. Gao, Y. Bai, J. Zhao, and X. C. Zeng, Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility, Front. Phys. 13(4), 138117 (2018) https://doi.org/10.1007/s11467-018-0810-2
57
C. Yang, Y. Chen, D. Liu, J. Wang, C. Chen, J. Wang, Y. Fan, S. Huang, and W. Lei, Vertically aligned g-AlOOH nanosheets on Al foils as flexible and reusable substrates for NH3 adsorption, Front. Phys. 13(4), 138101 (2018) https://doi.org/10.1007/s11467-018-0747-5
