Topological insulator nanostructures: Materials synthesis, Raman spectroscopy, and transport properties
Topological insulator nanostructures: Materials synthesis, Raman spectroscopy, and transport properties
Hui Li (李辉), Hailin Peng (彭海琳,), Wenhui Dang (党文辉), Lili Yu (余力立), Zhongfan Liu (刘忠范,)
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Nanostructured topological insulator materials such as ultrathin films, nanoplates, nanowires, and nanoribbons are attracting much attention for fundamental research as well as potential applications in low-energy dissipation electronics, spintronics, thermoelectrics, magnetoelectrics, and quantum computing due to their extremely large surface-to-volume ratios and exotic metallic edge/surface states. Layered Bi2Se3 and Bi2Te3 serve as reference topological insulator materials with a large nontrivial bulk gap up to 0.3 eV (equivalent to 3600 K) and simple single-Dirac-cone surface states. In this mini-review, we present an overview of recent advances in nanostructured topological insulator Bi2Se3 and Bi3Te3 from the viewpoints of controlled synthesis and physical properties. We summarize our recent achievements in the vapor-phase synthesis and structural characterization of nanostructured topological insulator Bi2Se3 and Bi2Te3, such as nanoribbons and ultrathin nanoplates.We also demonstrate the evolution of Raman spectra with the number of few-layer topological insulators, as well as the transport measurements that have succeeded in accessing the surface conductance and surface state manipulations in the device of topological insulator nanostructures.
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