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Frontiers of Physics

ISSN 2095-0462

ISSN 2095-0470(Online)

CN 11-5994/O4

邮发代号 80-965

2019 Impact Factor: 2.502

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Quantum spin Hall effect in inverted InAs/GaSb quantum wells
Cite this article
Ivan Knez, Rui-Rui Du. Quantum spin Hall effect in inverted InAs/GaSb quantum wells. Frontiers of Physics, 2012, 7(2): 200-207  
Copyright©2014, Higher Education Press and Springer-Verlag Berlin Heidelberg
This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Quantum spin Hall effect in inverted InAs/GaSb quantum wells
Ivan Knez, Rui-Rui Du
Department of Physics and Astronomy, Rice University, Houston, TX 77251-1892, USA
rrd@rice.edu
Abstract

We review the recent experimental progress towards observing quantum spin Hall effect in inverted InAs/GaSb quantum wells (QWs). Low temperature transport measurements in the hybridization gap show bulk conductivity of a non-trivial origin, while the length and width dependence of conductance in this regime show strong evidence for the existence of helical edge modes proposed by Liu et al. [Phys. Rev. Lett., 2008, 100: 236601]. Surprisingly, edge modes persist in spite of comparable bulk conduction and show only weak dependence on magnetic field. We elucidate that seeming independence of edge on bulk transport comes due to the disparity in Fermi-wave vectors between the bulk and the edge, leading to a total internal reflection of the edge modes.

Keyword: quantum spin Hall effect; InAs/GaSb quantum wells; topological insulators
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