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Preparation of bismuth telluride thin film by electrochemical atomic layer epitaxy (ECALE) |
| ZHU Wen, YANG Junyou, GAO Xianhui, HOU Jie, BAO Siqian, FAN Xian |
| State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, China |
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Abstract Thin-layer electrochemical studies of the underpotential deposition (UPD) of Bi and Te on cold rolled silver substrate have been performed. The voltammetric analysis of underpotential shift demonstrates that the initial Te UPD on Bi-covered Ag and Bi UPD on Te-covered Ag fitted UPD dynamics mechanism. A thin film of bismuth telluride was formed by alternately depositing Te and Bi via an automated flow deposition system. X-ray diffraction indicated the deposits of Bi2Te3. Energy Dispersive X-ray Detector quantitative analysis gave a 2: 3 stoichiometric ratio of Bi to Te, which was consistent with X-ray Diffraction results. Electron probe microanalysis of the deposits showed a network structure that results from the surface defects of the cold rolled Ag substrate and the lattice mismatch between substrate and deposit.
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Issue Date: 05 March 2007
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