Laser ablation of block copolymers with hydrogen-bonded azobenzene derivatives
Jintang Huang1, Youju Huang1(), Si Wu1,2()
1. Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany 2. Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Soft Matter Chemistry, Anhui Key Laboratory of Optoelectronic Science and Technology, Innovation Centre of Chemistry for Energy Materials, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Supramolecular assemblies (PS-b-P4VP(AzoR)) are fabricated by hydrogen-bonding azobenzene derivatives (AzoR) to poly(4-vinyl pyridine) blocks of polystyrene-block-poly(4-vinyl pyridine) (PS-b-P4VP). PS-b-P4VP(AzoR) forms phase separated nanostructures with a period of ~75–105 nm. A second length scale structure with a period of 2 µm is fabricated on phase separated PS-b-P4VP(AzoR) by laser interference ablation. Both the concentration and the substituent of AzoR in PS-b-P4VP(AzoR) affect the laser ablation process. The laser ablation threshold of PS-b-P4VP(AzoR) decreases as the concentration of AzoR increases. In PS-b-P4VP(AzoR) with different substituents (R= CN, H, and CH3), ablation thresholds follow the trend: PS-b-P4VP(AzoCN)<PS-b-P4VP(AzoCH3)<PS-b-P4VP(AzoH). This result indicates that the electron donor group (CH3) and the electron acceptor group (CN) can lower the ablation threshold of PS-b-P4VP(AzoR).
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