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High performance 1 mm AlGaN/GaN HEMT based on
SiC substrate |
| LUO Weijun1, WANG Xiaoliang1, CHEN Xiaojuan2, LI Chengzhan2, LIU Xinyu2, HE Zhijing2, WEI Ke2, LIANG Xiaoxin2 |
| 1.Institute of Semiconductors, Chinese Academy of Sciences; 2.Institute of Microelectronics, Chinese Academy of Sciences |
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Abstract This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate. Metal-organic chemical vapor deposition (MOCVD) was used to generate the epitaxy layers. Corresponding experiments show that the device has a gate length of 0.8 ?m exhibiting drain current density of 1.16 A/mm, transconductance of 241 ms/mm, a gate-drain breakdown voltage larger than 80 V, maximum current gain frequency of 20 GHz and maximum power gain frequency of 28 GHz. In addition, the power gain under the continues wave condition is 14.2 dB with a power density of 4.1 W/mm, while under the pulsed wave condition, power gain reaches 14.4 dB with power density at 5.2 W/mm. Furthermore, the two-port network impedance characteristics display great potential in microwave application.
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Issue Date: 05 March 2008
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