The design and fabrication on gate type resonant
tunneling transistor

doi:10.1007/s11460-008-0029-z

Front. Electr. Electron. Eng.

2008, Vol. 3

Issue (2) : 227-233 https://doi.org/10.1007/s11460-008-0029-z

The design and fabrication on gate type resonant tunneling transistor

GUO Weilian¹, LIANG Huilai¹, SONG Ruiliang¹, ZHANG Shilin¹, MAO Luhong¹, HU Liuchang¹, LI Jianheng¹, QI Haitao¹, GUO Weilian², FENG Zhen², TIAN Guoping², SHANG Yuehui², LIU Yongqiang², LI Yali², YUAN Mingwen², LI Xiaobai²

1.School of Electronic Information Engineering, Tianjin University; 2.13th Institute of CETC;

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Abstract In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully. A systematic depiction centers on the designs of material structure, device structure, photolithography mask, fabrication of device and the measurement and analysis of parameters. The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS. The work lays the foundation for further improvement on the performance and parameters of RTT.

Issue Date: 05 June 2008

Cite this article:

LIANG Huilai,GUO Weilian,LI Jianheng, et al. The design and fabrication on gate type resonant tunneling transistor[J]. Front. Electr. Electron. Eng., 2008, 3(2): 227-233.

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https://academic.hep.com.cn/fee/EN/10.1007/s11460-008-0029-z
https://academic.hep.com.cn/fee/EN/Y2008/V3/I2/227

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