Luminescence and recombine centre in ZnO/Si films

doi:10.1007/s11460-008-0081-8

Front Elect Electr Eng Chin

2009, Vol. 4

Issue (1) : 93-97 https://doi.org/10.1007/s11460-008-0081-8

Research Article

Luminescence and recombine centre in ZnO/Si films

Cihui LIU(

), Ran YAO, Jianfeng SU, Zeyu MA, Zhuxi FU

Department of Physics, University of Science and Technology of China

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Abstract

The D⁰h luminescence of ZnO films deposited on p-type Si substrates is produced by metal-organic chemical vapor deposition (MOCVD). After annealing in the air at 700°C for an hour, the photoluminescence (PL) spectra, the I-V characteristics and the deep level transient spectroscopy (DLTS) of the samples are measured. All the samples have a rectification characteristic. DLTS signals show two deep levels of E₁ and E₂. The Gaussian fit curves of the PL spectra at room temperature show three luminescence lines b, c and d, of which b is attributed to the exciton emission. The donor level E₁ measured by DLTS and the location state donor ionization energy E_d of the closely neighboring emission lines c and d are correlated. E₁ is judged as neutral donor bound to hole emission (D⁰h). Moreover, the intensity of the PL spectra decreases while the relative density of E₂ increases, showing that E₂ has the property of a non-radiative center.

Keywords metal-organic chemical vapor deposition (MOCVD) ZnO/p-Si heterojunction defect

Corresponding Author(s): LIU Cihui,Email:chliu@ustc.edu.cn

Issue Date: 05 March 2009

Cite this article:

Cihui LIU,Zeyu MA,Zhuxi FU, et al. Luminescence and recombine centre in ZnO/Si films[J]. Front Elect Electr Eng Chin, 2009, 4(1): 93-97.

URL:

https://academic.hep.com.cn/fee/EN/10.1007/s11460-008-0081-8
https://academic.hep.com.cn/fee/EN/Y2009/V4/I1/93

Fig0 XRD patterns of ZnO films grown with different flow rates of eluting gas

Tab0 Characteristics of deep levels at various preparation fluxes in samples

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