Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo

doi:10.1007/s11460-009-0008-z

Front Elect Electr Eng Chin

2009, Vol. 4

Issue (1) : 98-103 https://doi.org/10.1007/s11460-009-0008-z

RESEARCH ARTICLE

Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo

Suzhen LUAN(

), Hongxia LIU, Renxu JIA, Jin WANG

School of Microelectronics, Xidian University, Xi’an 710071, China

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Abstract

A two-dimensional (2D) model for the subthreshold current in the dual-material gate (DMG) silicon-on-insulator (SOI) MOSFET with a single halo is presented. The model considers single halo doping in the channel near the source and a dual-material gate to derive the channel potential using the explicit solution of the 2D Poisson’s equation. Together with the conventional drift-diffusion theory, this results in the development of a subthreshold current model for the novel structure. Model verification is carried out using the 2D device simulator ISE. Excellent agreement is obtained between the calculations and the simulated results of the model.

Keywords dual-material gate (DMG) silicon-on-insulator (SOI) electron mobility

Corresponding Author(s): LUAN Suzhen,Email:szluan@mail.xidian.edu.cn

Issue Date: 05 March 2009

Cite this article:

Suzhen LUAN,Hongxia LIU,Renxu JIA, et al. Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo[J]. Front Elect Electr Eng Chin, 2009, 4(1): 98-103.

URL:

https://academic.hep.com.cn/fee/EN/10.1007/s11460-009-0008-z
https://academic.hep.com.cn/fee/EN/Y2009/V4/I1/98

Fig.1 Schematic structure of (a) DMG SOI MOSFET with single halo (DMGH) and (b) conventional DMG SOI MOSFET

Fig.2 Calculated channel potential for DMGH with two different channel lengths and various drain voltages

Fig.3 Calculated - characteristics using exact and analytical approaches for two different channel lengths and various drain voltages

Fig.4 Variation of characteristics with work function difference at =1 V

Fig.5 Variation of characteristics with halo doping concentration at =1 V

Fig.6 - characteristics for different halo lengths with channel length fixed at =1 V

Fig.7 - characteristics with various lengths of for channel length fixed at =1 V

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