Design, fabrication and characterization of dual-channel real space transfer transistor

doi:10.1007/s11460-009-0043-9

Front Elect Electr Eng Chin

2009, Vol. 4

Issue (2) : 234-238 https://doi.org/10.1007/s11460-009-0043-9

RESEARCH ARTICLE

Design, fabrication and characterization of dual-channel real space transfer transistor

Weilian GUO(

), Shilin ZHANG, Xin YU

School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China

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Abstract

In this paper, using a δ-doping dual-channel structure and GaAs substrate, a real space transfer transistor (RSTT) is designed and fabricated successfully. It has the standard Λ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has. The negative resistance parameters can be varied by changing gate voltage (V_GS). For example, the PVCR varies from 2.1 to 10.6 while V_GS changes from 0.6 V to 1.0 V. The transconductance for I_P (ΔIP/ΔVGS) is 0.3 mS. The parameters of V_P, V_V and threshold gate voltage (V_T) for negative resistance characteristics arising are all smaller than the value reported in the literature. Therefore, this device is suitable for low dissipation power application.

Keywords real space transfer transistor (RSTT) high speed compound three terminal function device three terminal negative resistance device hot electron device electron transfer device

Corresponding Author(s): GUO Weilian,Email:xinyufisher@gmail.com

Issue Date: 05 June 2009

Cite this article:

Weilian GUO,Shilin ZHANG,Xin YU. Design, fabrication and characterization of dual-channel real space transfer transistor[J]. Front Elect Electr Eng Chin, 2009, 4(2): 234-238.

URL:

https://academic.hep.com.cn/fee/EN/10.1007/s11460-009-0043-9
https://academic.hep.com.cn/fee/EN/Y2009/V4/I2/234

Fig.1 Schematic diagram of dual-channel RSTT materials and device structure

Fig.2 Photograph of fabricated dual-channel RSTT

Fig.3 Drain-source - characteristics of dual-channel RSTT. (a) RSTT with low ; (b) RSTT with high

Fig.4 NDR parameters of RSTT with low . (a) , , vs ; (b) , , PVCR vs

Fig.5 , , , , PVCR vs of RSTT with high

Fig.6 - characteristics of three-terminal NDR device with resistive gate

Tab.1 Comparison of NDR parameters of RSTT between this work and Ref. []

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