Simplified parasitic capacitance extraction of shield in HVDC converter system with boundary element method

doi:10.1007/s11460-010-0097-8

Front Elect Electr Eng Chin

2010, Vol. 5

Issue (4) : 505-509 https://doi.org/10.1007/s11460-010-0097-8

RESEARCH ARTICLE

Simplified parasitic capacitance extraction of shield in HVDC converter system with boundary element method

Shili LIU(

), Zezhong WANG, Jing SUN

Beijing Key Laboratory of High Voltage & EMC, North China Electric Power University, Beijing 102206, China

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Abstract

It is critical to build a wide-band circuit model to conduct research on the characteristics of the electromagnetic disturbance source during the localization of high voltage direct current (HVDC) technology. Parasitic capacitance is most essential for modeling the equivalent circuit, so a fast and accurate computation of capacitance parameters plays a vital role. Because of the large size and complex structure of the converter equipment, it is impossible to obtain capacitance parameters by means of measurement or simulating calculation with finite element software. In this paper, a simplified method of capacitance extraction based on boundary element method is proposed, which can provide an efficient means of establishing simulation models. In the method presented, simulation model of the shield may not be chamfered. Consequently, the edge and corner of the shield do not need to be handled with a sphere, cylinder and other curved surface model. The availability of this method is demonstrated by comparing the capacitance parameters of chamfered shield with that of non-chamfered shield.

Keywords parasitic capacitance shield chamfer boundary element method (BEM) simplified model extraction

Corresponding Author(s): LIU Shili,Email:liushili994102@yahoo.com.cn

Issue Date: 05 December 2010

Cite this article:

Shili LIU,Zezhong WANG,Jing SUN. Simplified parasitic capacitance extraction of shield in HVDC converter system with boundary element method[J]. Front Elect Electr Eng Chin, 2010, 5(4): 505-509.

URL:

https://academic.hep.com.cn/fee/EN/10.1007/s11460-010-0097-8
https://academic.hep.com.cn/fee/EN/Y2010/V5/I4/505

Fig.1 Meshing model for box-plate structure

Tab.1 capacitance and parameters for box-plate structure

Fig.2 Shield of converter system tower

Fig.3 Schematic diagram of numbering for shielding sheets

Fig.4 Schematic diagram of fillet for shielding sheet

Fig.5 Meshing model for A and L sheets with neither of them chamfered

Fig.6 Meshing model for A and L sheets with only A sheet chamfered

Fig.7 Meshing model for A and L sheets with both of them chamfered

Tab.2 Parasitic capacitance of A and L sheets

Tab.3 Parasitic capacitance of A and C metal sheets

Tab.4 Parasitic capacitance of A and F metal sheets

Tab.5 Capacitance parameters error

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