Please wait a minute...
Frontiers in Energy

ISSN 2095-1701

ISSN 2095-1698(Online)

CN 11-6017/TK

邮发代号 80-972

2019 Impact Factor: 2.657

Frontiers of Energy and Power Engineering in China  2008, Vol. 2 Issue (4): 519-523   https://doi.org/10.1007/s11708-008-0095-1
  本期目录
Application of rapid thermal processing on SiN thin film to solar cells
Application of rapid thermal processing on SiN thin film to solar cells
LI Youjie1, LUO Peiqing1, ZHOU Zhibin1, CUI Rongqiang1, HUANG Jianhua2, WANG Jingxiao2
1.Solar Energy Institute, Shanghai Jiao Tong University; 2.Photovoltaic D&R Center of Linyang, Shanghai Jiao Tong University;
 全文: PDF(209 KB)   HTML
Abstract:Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mechanism and the application of the technique to silicon solar cells fabrication were discussed. A main achievement is an increase of the minority lifetime in silicon wafer with SiNx thin film by about 200% after the RTP was reached. PC-1D simulation results exhibit an enhancement of the efficiency of the solar cell by 0.42% coming from the minority lifetime improvement. The same experiment was also conducted with P-diffusion silicon wafers, but the increment of minority lifetime is just about 55%. It could be expected to improve the solar cell efficiency if it would be used in silicon solar cells fabrication with the combination of laser firing contact technique.
出版日期: 2008-12-05
 引用本文:   
. Application of rapid thermal processing on SiN thin film to solar cells[J]. Frontiers of Energy and Power Engineering in China, 2008, 2(4): 519-523.
LI Youjie, LUO Peiqing, ZHOU Zhibin, CUI Rongqiang, HUANG Jianhua, WANG Jingxiao. Application of rapid thermal processing on SiN thin film to solar cells. Front. Energy, 2008, 2(4): 519-523.
 链接本文:  
https://academic.hep.com.cn/fie/CN/10.1007/s11708-008-0095-1
https://academic.hep.com.cn/fie/CN/Y2008/V2/I4/519
1 Zhang Sudong . Research on the Thermal stability of SiNx thin films for back passivation. In: : Feng Linghuan ed. 2006 New Photovoltaiic Developmnt in the China. Chengdu: North-west Jiaotong UniversityPress, 2006, 746–749 (in Chinese)
2 Zha Chaolin . Research on the rapidly thermal diffusion characteres and the furnace. In: : Yan Luguang ed. 21 Century New Soalar Technics. Shanghai: Shanghai Jiaotong UniversityPress, 2003, 58–61 (in Chinese)
3 Wang Jingxiao . PC1D solar cell performance simulation software. In: : Yan Luguang ed. 21 Century New SoalarTechnics. Shanghai: Shanghai Jiaotong University Press, 2003, 41–43 (in Chinese)
4 Chen Z, Pang S K, Yasutake K . Plasma-enhanced chemical-vapor-deposited oxide for lowsurface recombination velocity and high effective lifetime in silicon. Journal of Applied Physics, 1993, 74(4): 2856–2859.
doi:10.1063/1.354638
5 Wieringen A C, Warmoltz N . On the permeation of hydrogenand helium in single crystal silicon and germanium at elevated temperatures. Physica, 1956, 22(6): 849–865.
doi:10.1016/S0031-8914(56)90039-8
6 Rohatgi A . Designsand fabrication technologies for future commercial crystalline Sisolar Cells. In: : Sopori B L, Kalejs J, eds. 15thWorkshop on Crystalline Silicon Solar Cells and Modules: Materialsand Processes. Colorado: Vail Cascade Resort, 2005, 11–22
7 Chen Fengxiang . Silicon Surfacece and bulk defect passivation by PECVD. Acta Energiae Solaris Sinica, 2003, 24(3): 348–351(in Chinese)
Viewed
Full text


Abstract

Cited

  Shared   
  Discussed