Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunction solar cells

doi:10.1007/s11708-016-0432-8

Front. Energy

2017, Vol. 11

Issue (1) : 92-95 https://doi.org/10.1007/s11708-016-0432-8

RESEARCH ARTICLE

Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunction solar cells

Haibin HUANG(

), Gangyu TIAN, Tao WANG, Chao GAO, Jiren YUAN, Zhihao YUE, Lang ZHOU

Institute of Photovoltaics, Nanchang University, Nanchang 330031, China

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Abstract

Double-layer emitters with different doping concentrations (DLE) have been designed and prepared for amorphous silicon/crystalline silicon (α-Si:H/c-Si) heterojunction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation (AFORS-HET, http://www.paper.edu.cn/html/releasepaper/2014/04/282/) prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency (QE) results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.

Keywords double-layer emitter α-Si:H/c-Si heterojunction solar cell short circuit current quantum efficiency current-voltage-temperature

Corresponding Author(s): Haibin HUANG

Just Accepted Date: 28 September 2016 Online First Date: 27 October 2016 Issue Date: 16 November 2016

Cite this article:

Haibin HUANG,Gangyu TIAN,Tao WANG, et al. Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunction solar cells[J]. Front. Energy, 2017, 11(1): 92-95.

URL:

https://academic.hep.com.cn/fie/EN/10.1007/s11708-016-0432-8
https://academic.hep.com.cn/fie/EN/Y2017/V11/I1/92

Fig.1 Cross sections of a double layer emitter HJT solar cell and a conventional HJT solar cell

Fig.2 Sample of solar cell fabricated

Tab.1 Parameters of doped a-Si:H layers deposition

Fig.3 Light I-V curves of samples with a DLE or SLE structure

Fig.4 EQE curves of best cells with DLE and SLE, both in simulation and experiment

Fig.5 Ideal factor curves of samples with DLE and SLE in the range of 100 K to 300 K

Fig.6 E _a curves of samples with DLE and SLE from IVT analysis

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