Ga(X)N/Si nanoarchitecture: An emerging semiconductor platform for sunlight-powered water splitting toward hydrogen

doi:10.1007/s11708-023-0881-9

Front. Energy

2024, Vol. 18

Issue (1) : 56-79 https://doi.org/10.1007/s11708-023-0881-9

Ga(X)N/Si nanoarchitecture: An emerging semiconductor platform for sunlight-powered water splitting toward hydrogen

Yixin LI¹, Sharif Md. SADAF²(

), Baowen ZHOU¹(

)

¹. Key Laboratory for Power Machinery and Engineering of the Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
². Centre Energie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique (INRS)-Université du Québec, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X1S2, Canada

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Abstract

Sunlight-powered water splitting presents a promising strategy for converting intermittent and virtually unlimited solar energy into energy-dense and storable green hydrogen. Since the pioneering discovery by Honda and Fujishima, considerable efforts have been made in this research area. Among various materials developed, Ga(X)N/Si (X = In, Ge, Mg, etc.) nanoarchitecture has emerged as a disruptive semiconductor platform to split water toward hydrogen by sunlight. This paper introduces the characteristics, properties, and growth/synthesis/fabrication methods of Ga(X)N/Si nanoarchitecture, primarily focusing on explaining the suitability as an ideal platform for sunlight-powered water splitting toward green hydrogen fuel. In addition, it exclusively summarizes the recent progress and development of Ga(X)N/Si nanoarchitecture for photocatalytic and photoelectrochemical water splitting. Moreover, it describes the challenges and prospects of artificial photosynthesis integrated device and system using Ga(X)N/Si nanoarchitectures for solar water splitting toward hydrogen.

Keywords Ga(X)N/Si nanoarchitecture artificial photosynthesis water splitting solar toward hydrogen

Corresponding Author(s): Sharif Md. SADAF,Baowen ZHOU

About author:

Online First Date: 16 June 2023 Issue Date: 27 March 2024

Cite this article:

Yixin LI,Sharif Md. SADAF,Baowen ZHOU. Ga(X)N/Si nanoarchitecture: An emerging semiconductor platform for sunlight-powered water splitting toward hydrogen[J]. Front. Energy, 2024, 18(1): 56-79.

URL:

https://academic.hep.com.cn/fie/EN/10.1007/s11708-023-0881-9
https://academic.hep.com.cn/fie/EN/Y2024/V18/I1/56

Fig.1 Schematic diagram of the contribution of solar-driven water splitting toward hydrogen to carbon neutrality.

Fig.2 Schematic of different configurations of solar toward hydrogen for water splitting reaction.

Fig.3 Band structure and catalytic configuration of Ga(X)N nanowires.

Fig.4 Loading of Rh/Cr₂O₃ on GaN nanowires.

Fig.5 Loading of Rh/Cr₂O₃ and Co₃O₄ co-catalysts.

Fig.6 Effect of band change on the behavior of photogenerated carriers.

Fig.7 Effect of gradient doping on the behavior of photogenerated carriers by adjusting the built-in electric field.

Fig.8 Effect of multi-band structures on Ga(X)N NWs.

Fig.9 Si-doping engineering for GaN nanowires.

Fig.10 n⁺-GaN nanowires for photocathode.

Fig.11 MoS_x-decorated of GaN NWs.

Fig.12 Fe_Fal-decrated of GaN NWs.

Fig.13 Self-improved effect of Ga(X)N/Si-based APIDS.

Fig.14 Ga(X)N-based tunnel junction photocathode.

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