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Frontiers of Mechanical Engineering

ISSN 2095-0233

ISSN 2095-0241(Online)

CN 11-5984/TH

Postal Subscription Code 80-975

2018 Impact Factor: 0.989

Front. Mech. Eng.    2006, Vol. 1 Issue (2) : 238-241    https://doi.org/10.1007/s11465-006-0011-5
The electrostatic-alloy bonding technique used in MEMS
WANG Wei, CHEN Wei-ping
MEMS Center, Harbin Institute of Technology, Harbin 150001, China
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Abstract Electrostatic-alloy bonding of silicon wafer with glass deposited by Au to form Si/Au-glass water, and bonding of Si/Au-glass with silicon wafer were researched during fabrication of pressure sensors. The silicon wafer and glass wafer with an Au film resistor were bonded by electrostatic bonding, and then Si-Au alloy bonding was formed by annealing at 400vH for 2 h. The air sealability of the cavity after bonding was finally tested using the N2 filling method. The results indicate that large bond strength was obtained at the bonding interface. This process was used in fabricating a pressure sensor with a sandwich structure. The results indicate that the sensor presented better performances and that the bonding techniques can be used in MEMS packaging.
Issue Date: 05 June 2006
 Cite this article:   
CHEN Wei-ping,WANG Wei. The electrostatic-alloy bonding technique used in MEMS[J]. Front. Mech. Eng., 2006, 1(2): 238-241.
 URL:  
https://academic.hep.com.cn/fme/EN/10.1007/s11465-006-0011-5
https://academic.hep.com.cn/fme/EN/Y2006/V1/I2/238
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