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Frontiers of Mechanical Engineering

ISSN 2095-0233

ISSN 2095-0241(Online)

CN 11-5984/TH

Postal Subscription Code 80-975

2018 Impact Factor: 0.989

Front. Mech. Eng.    2008, Vol. 3 Issue (3) : 261-264    https://doi.org/10.1007/s11465-008-0036-z
Growth and properties analysis of metal-organic chemical vapor deposited MgZnO films on -AlO substrates
SHI Zengliang1, LIU Dali1, YAN Xiaolong1, GAO Zhongmin1, BAI Shiying2
1.State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University; 2.Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, National Analytical Research Center of Electrochemistry and Spectroscopy;
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Abstract MgxZn1-xO (0 < x ? 0.12) thin films with the wurtzite structure have been successfully grown on c-Al2O3 substrates by metal-organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence (PL) spectrometry, and transmission measurements are performed to study the characteristics of MgxZn1-xO thin films. Results show that with increasing Mg content, the diffraction peak of MgxZn1-xO thin films shifts towards a higher diffraction angle (the biggest shift is 0.22°), and the full width at half maximum (FWHM) of the diffraction peak is broadened. Meanwhile, a blue-shift occurs at the near-band-edge (NBE) emission peak and the largest blue-shift of the band gap of the MgxZn1-xO films is 113 meV with Mg content x = 0.12. Therefore, the energy band gap of the MgxZn1-xO films is determined by Mg content in the thin films and the energy band gap increases with an increase of Mg content.
Issue Date: 05 September 2008
 Cite this article:   
SHI Zengliang,LIU Dali,YAN Xiaolong, et al. Growth and properties analysis of metal-organic chemical vapor deposited MgZnO films on -AlO substrates[J]. Front. Mech. Eng., 2008, 3(3): 261-264.
 URL:  
https://academic.hep.com.cn/fme/EN/10.1007/s11465-008-0036-z
https://academic.hep.com.cn/fme/EN/Y2008/V3/I3/261
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