Quantum dots in nanowires (DINWs) are considered as important building blocks for novel nanoscale semiconductor optoelectronic devices. In this paper, pure axial heterojunction InGaN/GaN DINWs are grown by using plasma-assisted molecular beam epitaxy (PA-MBE) system. The InGaN quantum dots (QDs) are disk-like observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The diameter of QDs can be controlled by the growth conditions of nanowires (NWs), while the thickness of QDs can be controlled by the growth time of InGaN. Temperature-dependent photoluminescence (TDPL) measurements demonstrate that the PL peak of DINWs with small and uniform sizes shows a general red shift with increasing temperature. However, the PL peak of DINWs with non-uniform sizes shows an abnormal blue shift with increasing temperature, which is due to different internal quantum efficiencies of the DINWs with different sizes.
Holmes M J, Choi K, Kako S, Arita M, Arakawa Y. Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot. Nano Letters, 2014, 14(2): 982–986
https://doi.org/10.1021/nl404400d
pmid: 24422516
2
Guo W, Zhang M, Banerjee A, Bhattacharya P. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. Nano Letters, 2010, 10(9): 3355–3359
https://doi.org/10.1021/nl101027x
pmid: 20701296
3
Lu Y J, Kim J, Chen H Y, Wu C, Dabidian N, Sanders C E, Wang C Y, Lu M Y, Li B H, Qiu X, Chang W H, Chen L J, Shvets G, Shih C K, Gwo S. Plasmonic nanolaser using epitaxially grown silver film. Science, 2012, 337(6093): 450–453
https://doi.org/10.1126/science.1223504
pmid: 22837524
4
Calleja E, Sanchez-Garcia M A, Sanchez F J, Calle F, Naranjo F B, Munoz E, Jahn U, Ploog K. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy. Physical Review B: Condensed Matter and Materials Physics, 2000, 62(24): 16826–16834
https://doi.org/10.1103/PhysRevB.62.16826
5
Tourbot G, Bougerol C, Grenier A, Den Hertog M, Sam-Giao D, Cooper D, Gilet P, Gayral B, Daudin B. Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE. Nanotechnology, 2011, 22(7): 075601
https://doi.org/10.1088/0957-4484/22/7/075601
pmid: 21233547
6
Nguyen H P, Zhang S, Cui K, Han X, Fathololoumi S, Couillard M, Botton G A, Mi Z. p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111). Nano Letters, 2011, 11(5): 1919–1924
https://doi.org/10.1021/nl104536x
pmid: 21517080
7
Pan C, Dong L, Zhu G, Niu S, Yu R, Yang Q, Liu Y, Wang Z L. High-resolution electroluminescent imaging of pressure distribution using a piezoelectric nanowire LED array. Nature Photonics, 2013, 7(9): 752–758
https://doi.org/10.1038/nphoton.2013.191
8
Nguyen H P, Djavid M, Woo S Y, Liu X, Connie A T, Sadaf S, Wang Q, Botton G A, Shih I, Mi Z. Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers. Scientific Reports, 2015, 5: 7744
https://doi.org/10.1038/srep07744
pmid: 25592057
9
Consonni V. Self-induced growth of GaN nanowires by molecular beam epitaxy: a critical review of the formation mechanisms. Physica Status Solidi (RRL) - Rapid Research Letters., 2013, 7(10): 699–712
10
Fernández-Garrido S, Grandal J, Calleja E, Sánchez-García M A, López-Romero D. A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111). Journal of Applied Physics, 2009, 106(12): 126102
https://doi.org/10.1063/1.3267151
11
Lang N. Studies on the growth of III-nitride quantum dots by MBE and related properties. Dissertation for the Doctoral Degree. Beijing: Tsinghua University, 2014, 35–36
