1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 3. University of Chinese Academy of Sciences, Beijing 100049, China
Mixed lead-tin (Pb-Sn) perovskites present a promising strategy to extend the light-harvesting range of perovskite-based solar cells (PSCs). The use of electron-transporting layer or hole-transporting layer (HTL) is critical to achieve high device efficiency. This strategy, however, requires tedious layer-by-layer fabrication as well as high-temperature annealing for certain oxides. In this work, we fabricated HTL-free planar FAPb0.5Sn0.5I3 PSCs with the highest efficiency of 7.94%. High short-circuit current density of 23.13 mA/cm2 was attained, indicating effective charge extraction at the ITO/FAPb0.5Sn0.5I3 interface. This finding provides an alternative strategy to simplify the manufacture of single-junction or tandem PSCs.
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