Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity

doi:10.1007/s12200-018-0820-2

Frontiers of Optoelectronics

2018, Vol. 11

Issue (3): 245-255 https://doi.org/10.1007/s12200-018-0820-2

本期目录

Longitudinal twinning α-In₂Se₃ nanowires for UV-visible-NIR photodetectors with high sensitivity

Zidong ZHANG^1,², Juehan YANG¹, Fuhong MEI², Guozhen SHEN^1,³(

)

¹. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
². Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China
³. College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100029, China

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Abstract：

Longitudinal twinning α-In₂Se₃ nanowires with the (10 $1 ¯$ 8) twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized α-In₂Se₃ nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm²·V⁻¹·S⁻¹ and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared (UV-visible-NIR) region. Besides, the fabricated device showed a high responsivity of 8.57 × 10⁵ A·W⁻¹, high external quantum efficiency up to 8.8 × 10⁷% and a high detectivity of 1.58 × 10¹² Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In₂Se₃ nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In₂Se₃ nanowires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.

Key words： photodetectors nanowires twinning ultraviolet-visible-near-infrared (UV-visible-NIR)

收稿日期: 2018-04-04 出版日期: 2018-08-31

Corresponding Author(s): Guozhen SHEN

引用本文:

. [J]. Frontiers of Optoelectronics, 2018, 11(3): 245-255.
Zidong ZHANG, Juehan YANG, Fuhong MEI, Guozhen SHEN. Longitudinal twinning α-In₂Se₃ nanowires for UV-visible-NIR photodetectors with high sensitivity. Front. Optoelectron., 2018, 11(3): 245-255.

链接本文:

https://academic.hep.com.cn/foe/CN/10.1007/s12200-018-0820-2
https://academic.hep.com.cn/foe/CN/Y2018/V11/I3/245

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