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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

邮发代号 80-976

Frontiers of Optoelectronics  2019, Vol. 12 Issue (4): 352-364   https://doi.org/10.1007/s12200-019-0907-4
  本期目录
Antimony doped Cs2SnCl6 with bright and stable emission
Jinghui LI1, Zhifang TAN2, Manchen HU1, Chao CHEN2, Jiajun LUO1, Shunran LI1, Liang GAO1, Zewen XIAO1, Guangda NIU1(), Jiang TANG2()
1. Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan 430074, China
2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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Abstract

Lead halide perovskites, with high photoluminescence efficiency and narrow-band emission, are promising materials for display and lighting. However, the lead toxicity and environmental sensitivity hinder their potential applications. Herein, a new antimony-doped lead-free inorganic perovskites variant Cs2SnCl6:xSb is designed and synthesized. The perovskite variant Cs2SnCl6:xSb exhibits a broadband orange-red emission, with a photoluminescence quantum yield (PLQY) of 37%. The photoluminescence of Cs2SnCl6:xSb is caused by the ionoluminescence of Sb3+ within Cs2SnCl6 matrix, which is verified by temperature dependent photoluminescence (PL) and PL decay measurements. In addition, the all inorganic structure renders Cs2SnCl6:xSb with excellent thermal and water stability. Finally, a white light-emitting diode (white-LED) is fabricated by assembling Cs2SnCl6:0.59%Sb, Cs2SnCl6:2.75%Bi and Ba2Sr2SiO4:Eu2+ onto the commercial UV LED chips, and the color rendering index (CRI) reaches 81.

Key wordsperovskite    lead-free    antimony doping    orange-red emission
收稿日期: 2019-02-14      出版日期: 2019-12-30
Corresponding Author(s): Guangda NIU,Jiang TANG   
 引用本文:   
. [J]. Frontiers of Optoelectronics, 2019, 12(4): 352-364.
Jinghui LI, Zhifang TAN, Manchen HU, Chao CHEN, Jiajun LUO, Shunran LI, Liang GAO, Zewen XIAO, Guangda NIU, Jiang TANG. Antimony doped Cs2SnCl6 with bright and stable emission. Front. Optoelectron., 2019, 12(4): 352-364.
 链接本文:  
https://academic.hep.com.cn/foe/CN/10.1007/s12200-019-0907-4
https://academic.hep.com.cn/foe/CN/Y2019/V12/I4/352
Fig.1  
Fig.2  
x lex/nm lem/nm FWHM/nm Stokes shift/nm PLQY
0 N/A N/A N/A N/A N/A
0.20% 365 601 101 236 25.9%
0.41% 364 601 102 237 28.3%
0.59% 365 602 101 237 37.0%
0.89% 365 604 102 239 32.0%
0.98% 366 602 100 236 21.9%
Tab.1  
Fig.3  
Fig.4  
Fig.5  
feeding concentrations ICP-OES-determined concentrations
0.99% 0.20%
4.76% 0.41%
9.09% 0.59%
16.66% 0.89%
23.08% 0.98%
  
  
x a Rp/% Rwp/% χ2
0.00% 10.37371 4.91 6.95 4.63
0.20% 10.37373 5.31 8.09 6.55
0.41% 10.38144 5.26 8.00 6.27
0.59% 10.38175 4.51 6.51 4.10
0.89% 10.38232 4.77 6.97 4.75
0.98% 10.38246 4.78 6.79 4.53
  
  
  
  
  
  
  
  
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