Impact of film thickness in laser-induced periodic structures on amorphous Si films
Liye Xu1,2,3,4, Jiao Geng2,4(), Liping Shi2,4,5, Weicheng Cui3,4(), Min Qiu2,4()
1. College of Optical Science and Engineering, Zhejiang University, Hangzhou 310058, China 2. Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China 3. Key Laboratory of Coastal Environment and Resources of Zhejiang Province (KLaCER), School of Engineering, Westlake University, Hangzhou 310024, China 4. Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China 5. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
We report self-organized periodic nanostructures on amorphous silicon thin films by femtosecond laser-induced oxidation. The dependence of structural periodicity on the thickness of silicon films and the substrate materials is investigated. The results reveal that when silicon film is 200 nm, the period of self-organized nanostructures is close to the laser wavelength and is insensitive to the substrates. In contrast, when the silicon film is 50 nm, the period of nanostructures is much shorter than the laser wavelength, and is dependent on the substrates. Furthermore, we demonstrate that, for the thick silicon films, quasi-cylindrical waves dominate the formation of periodic nanostructures, while for the thin silicon films, the formation originates from slab waveguide modes. Finite-difference time-domain method-based numerical simulations support the experimental discoveries.
. [J]. Frontiers of Optoelectronics, 2023, 16(2): 16.
Liye Xu, Jiao Geng, Liping Shi, Weicheng Cui, Min Qiu. Impact of film thickness in laser-induced periodic structures on amorphous Si films. Front. Optoelectron., 2023, 16(2): 16.
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