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Growth of phosphorus-doped p-type ZnO thin films
by MOCVD |
| YE Zhizhen, WANG Jingrui, WU Yazhen, ZHOU Xincui, CHEN Fugang, XU Weizhong, MIAO Yan, HUANG Jingyun, LÜ Jianguo, ZHU Liping, ZHAO Binghui |
| State Key Laboratory of Silicon Materials, Zhejiang University |
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Abstract Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O2, and P2O5 powders are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of 4.64 ?·cm, a hole concentration of 1.61 × 1018 cm-3, and a Hall mobility of 0.838 cm2·(V·s)-1 at room temperature. A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the p-type characteristics of the films.
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Issue Date: 05 June 2008
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