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Optical properties and structure of InAs quantum
dots in near-infrared band |
| JIA Guozhi1, YAO Jianghong1, SHU Yongchun1, WANG Zhanguo2 |
| 1.The Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Tianjin Key Laboratory of Photonics Materials and Technology for Information Science, TEDA Applied Physics School, Nankai University; 2.The Key Lab of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Tianjin Key Laboratory of Photonics Materials and Technology for Information Science, TEDA Applied Physics School, Nankai University；Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences |
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Abstract The InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are studied as a function of growth temperature at a specific InAs coverage of 2.7 ML. The QDs density is significantly reduced from 8.0 × 1010 to 5.0 × 109 cm-2 as the growth temperature increases from 480°C to 520°C, while the average QDs diameter and height becomes larger. The effects of the growth temperature on the evolution of bimodal QDs are investigated by combining atomic force microscopy (AFM) and photoluminescence (PL). Results show that the formation of the bimodal QDs depends on the growth temperature: at a growth temperature of 480°C, large QDs result from the small QDs coalition; at a growth temperature of 535°C, the indium desorption and InAs segregation result in the formation of small QDs.
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| Keywords
quantum dot (QD)
molecular beam epitaxy (MBE)
atomic force microscopy (AFM)
photoluminescence (PL)
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Issue Date: 05 June 2008
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