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Optical properties of InN films grown by MOCVD |
Jieying KONG1, Bin LIU1, Rong ZHANG1( ), Zili XIE1, Yong ZHANG2, Xiangqian XIU1, Youdou ZHENG1 |
| 1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University; 2. National Laboratory of Solid State Microstructures, Nanjing University |
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Abstract By means of optical absorption, photoluminescence (PL), Raman scattering and ellipsometry, optical properties of indium nitride (InN) films grown by metal organic chemical vapor deposition (MOCVD) are investigated. Through absorption and PL measurements, it is proven that the band gap of high quality InN is 0.68 eV, which agrees with the recently reported value, 0.7 eV. By analysis of the Raman scattering spectrum, the comparatively low background concentration of electron results in a smaller band gap value. The transition energy of wurtzite InN at critical point is determined by ellipsometric spectra. In addition, the complex refractive index of InN at energy ranging from 0.65 to 4.0 eV is obtained for the first time.
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| Keywords
indium nitride (InN)
optical absorption
photoluminescence (PL)
ellipsometry
metal organic chemical vapor deposition (MOCVD)
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Corresponding Author(s):
ZHANG Rong,Email:rzhang@nju.edu.cn
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Issue Date: 05 September 2009
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