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Photoresponse of ZnO single crystal films |
Ying Li1, Shiwei Feng1( ), Ji Yang1, Yuezong Zhang1, Xuesong Xie1, Changzhi Lü1, Yicheng Lu2 |
| 1. School of Electronic Information and Control Engineering, Beijing University of Technology; 2. Department of Computer and Electrical Engneering, Rutgers University |
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Abstract The ohmic contact and photoresponse of a ZnO single crystal film by metalorganic chemical vapor deposition (MOCVD) were investigated. The electrical and photoresponsive changes in the ZnO film due to RF sputter deposition of SiO2 (antireflection coating) were also discussed. The experimental results show that the non-alloyed Al/Au metallization scheme forms good ohmic contact on n-type ZnO, RF sputter deposition of SiO2 induces defects which behave as carrier traps and prolong response time, and the photoresponse of ZnO epitaxial film deteriorates with time.
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ZnO single crystal film
metalorganic chemical vapor deposition (MOCVD)
photoresponse
antireflection coating (AR coating)
RF sputter damage
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Corresponding Author(s):
Feng Shiwei,Email:shwfeng@bjut.edu.cn
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Issue Date: 05 September 2009
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