|
|
Temperature dependence of photoluminescence of QD arrays |
Guoliang LIU1, Jianghong YAO1(), Jingjun XU1, Zhanguo WANG2 |
1. The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Tianjin Key Laboratory of Photonics Materials and Technology for Information Science, TEDA Applied Physics School, Nankai University; 2. Institute of Semiconductors, Chinese Academy of Sciences |
|
|
Abstract It is essentially important to understand the temperature dependence of the photoluminescence of multimodal quantum dot (QD) arrays for the realization of efficient photonic devices. In this paper, the dynamics processes of different density multimodal QD arrays were fitted by using the rate equation model. It is shown that, in high density QD arrays, the intensity of photoluminescence of different QD families has different temperature dependence, and the intensity of photoluminescence is quenched as the temperature increases in low density QD arrays. In high density QD arrays, as the temperature increases, the carriers will be thermally excited into the wetting layer from QDs, and then some of them will be recaptured by the big scale QDs; carrier coupling takes place between the different QD families, while in low density QD arrays, the carrier transfer between different QD families will be limited. Temperature dependence of the maximum of the ratio of photoluminescence intensity of different QD families strongly depends on the difference of thermal activation energies.
|
Keywords
optoelectronics
rate equation
photoluminescence
multimodal quantum dot (QD) arrays
thermally excited
|
Corresponding Author(s):
YAO Jianghong,Email:yaojh@nankai.edu.cn
|
Issue Date: 05 September 2009
|
|
1 |
HeinrichsdorffF, RibbatC, GrundmannM, . High-power quantum-dot lasers at 1100 nm. Applied Physics Letters , 2000, 76(5): 556–558 doi: 10.1063/1.125816
|
2 |
KrebsR, KlopfF, RennonS, . High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 μm. Electronics Letters , 2001, 37(20): 1223–1225
|
3 |
RebohleL, SchreyF F, HoferS, . Energy level engineering in InAs quantum dot nanostructures. Applied Physics Letters , 2002, 81(11): 2079–2081 doi: 10.1063/1.1506419
|
4 |
WangJ, XingD. Overview of the research on quantum-dot lasers. Chinese Journal of Quantum Electronics , 2003, 20(2): 129–134 (in Chinese)
|
5 |
TommJ W, ElsaesserT, MazurY I, . Transient luminescence of dense InAs/GaAs quantum dot arrays. Physical Review B , 2003, 67(4): 045326 .
|
6 |
KongL M, CaiJ F, ChenZ R, . Studies on time-resolved photoluminescence spectrum of wetting layer and quantum dots in the structure of self-organized quantum dots. Chinese Journal of Quantum Electronics , 2003, 20(2), 208–212 (in Chinese)
|
7 |
BrusaferriL, SanguinettiS, GrilliE, . Thermally activated carrier transfer and luminescence line shape in self-organized InAs dots. Applied Phsics Letters , 1996, 69(22): 3354–3356 doi: 10.1063/1.117304
|
8 |
de SalesF V, CruzJ M R, da SilvaS W, . Carrier kinetics in quantum dots through continuous wave photoluminescence modeling: A systematic study on a sample with surface dot density gradient. Journal of Appled Physics , 2003, 94(3): 1787–1794 doi: 10.1063/1.1586953
|
9 |
ZhangY C, HuangC J, LiuF Q, . Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots. Journal of Crystal Growth , 219(3): 199–204
|
10 |
WangJ Z, YangZ, YangC L. Photoluminescence of InAs quantum dots grown on GaAs surface. Applied Physics Letters , 2000, 77(18): 2837–2839 doi: 10.1063/1.1320854
|
11 |
MarcinkeviciusS, LeonR. Photoexcited carrier transfer in InGaAs quantum dot structures: dependence on the dot density. Applied Physics Letters , 2000, 76(17): 2406–2408 doi: 10.1063/1.126359
|
12 |
DaiZ H, SunJ Z, ZhangL D, . Study on the coupled multiple nanocrystal quantum-dot system. Physica E , 2003, 18(4): 412–420 doi: 10.1016/S1386-9477(03)00179-6
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|