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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

Postal Subscription Code 80-976

Front Optoelec Chin    2008, Vol. 1 Issue (3-4) : 323-328    https://doi.org/10.1007/s12200-008-0069-2
Research article
Organic electroluminescent characteristics of PS:NPB composite hole transporting layer
Fan SUO, Junsheng YU(), Jing DENG, Shuangling LOU, Yadong JIANG
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China
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Abstract

Green organic light-emitting devices with a structure of indium-tin-oxide (ITO)/polystyrene (PS):N,N′-bis-(3-naphthyl)-N,N′-biphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)/tris-(8-hydroxyquinoline)-aluminum (Alq3)/Mg:Ag were fabricated. A doping system consisting of small-molecular hole transporting material NPB and polymeric matrix PS was applied as a composite hole transporting layer (HTL), and the thin film preparation was simplified via spin-coating technique. By adjusting the component ratio of the doping system, several devices with different concentration proportion of PS:NPB are constructed. The electroluminescent characteristics of the devices were investigated and discussed. This study demonstrated that the difference of doping concentration of NPB has a remarkable impact on the optoelectronic performance of both HTL and the devices. Optimum device performance can be obtained by choosing a suitable concentration proportion of PS:NPB at 1:1. This study contributes to the construction of composite functional layers of organic light-emitting diode (OLED) devices and to the technical modification.

Keywords organic light-emitting device      N,N′-bis-(3-naphthyl)-N,N′-biphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB)      polystyrene      composite hole transporting layer      device performance     
Corresponding Author(s): YU Junsheng,Email:jsyu@uestc.edu.cn   
Issue Date: 05 September 2009
 Cite this article:   
Junsheng YU,Jing DENG,Shuangling LOU, et al. Organic electroluminescent characteristics of PS:NPB composite hole transporting layer[J]. Front Optoelec Chin, 2008, 1(3-4): 323-328.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-008-0069-2
https://academic.hep.com.cn/foe/EN/Y2008/V1/I3-4/323
Fig0  Chemical structures of materials and device configuration
devicePS:NPB (x:y)VT/VJ/mA·cm-2Lmax/cd·m-2ηlm/lm·W-1CIE
A1:93.534415550.24(0.34, 0.55)
B3:73.040023380.38(0.33, 0.54)
C1:14.033040250.57(0.33, 0.56)
D7:35.024510390.03(0.34, 0.56)
E9:19.0147950.02(0.32, 0.55)
Tab0  Main parameters of device performance
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