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AlGaN solar-blind photodetectors
grown by low pressure MOCVD |
Xiaoyan WANG , Xiaoliang WANG , Baozhu WANG , Junxue RAN , Hongling XIAO , Cuimei WANG , Guoxin HU , |
Key Laboratory
of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China; |
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Abstract AlxGa1−xN ternary alloys are very attractive materials for application to ultraviolet (UV) photodetection. In this work, high Al content AlxGa1−xN films are grown on sapphire substrate by low pressure metalorganic chemical vapor deposition (MOCVD). The Al content in the AlxGa1−xN epilayer is estimated to be 54% by high resolution X-ray diffraction (HRXRD) and Vegard’s law. The full width at half maximum (FWHM) of the rocking curve for the Al0.54Ga0.46N (0002) is about 597 arcsec. According to the transmittance measurement result, our sample is suitable for fabricating solar-blind photodetectors. The observed Fabry-Perot fringes in the transmission region indicate that high optical quality is obtained. Solar-blind metal-semiconductor-metal (MSM) photodetectors based on the MOCVD-grown Al0.54Ga0.46N film are fabricated and tested. The detector has a low dark current of about 31?pA under a bias voltage of 5?V. An UV/visible contrast of about four orders of magnitude is observed and responsivity increases with increments of the bias voltage.
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Issue Date: 05 March 2009
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Kumakura K, Makimoto T. High-voltage operation withhigh current gain of pnp AlGaN/GaN heterojunction bipolar transistorswith thin n-type GaN base. Applied PhysicsLetters, 2005, 86(2): 023506-1―023506-3
|
|
Liu Y, Egawa T, Jiang H, Zhang B J, Ishikawa H. Novelquaternary AlInGaN/GaN heterostructure field effect transistors onsapphire substrate. Japanese Journal ofApplied Physics, 2006, 45(7): 5728―5731
doi: 10.1143/JJAP.45.5728
|
|
Wang X L, Wang C M, Hu G X, Wang J X, Chen T S, Jiao G, Li J P, Zeng Y P, Li J M. Improved DC and RF performance of AlGaN/GaN HEMTs grownby MOCVD on sapphire substrates. Solid-StateElectronics, 2005, 49(8): 1387―1390
doi: 10.1016/j.sse.2005.06.022
|
|
Wang X L, Wang C M, Hu G X, Xiao H L, Fang C B, Wang J X, Ran J X, Li J P, Li J M, Wang Z G. MOCVD-grownhigh-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate. Journal of Crystal Growth, 2007, 298: 791―793
doi: 10.1016/j.jcrysgro.2006.10.217
|
|
Wang X L, Hu G X, Ma Z Y, Ran J X, Wang C M, Xiao H L, Tang J, Li J P, Wang J X, Zeng Y P, Li J M, Wang Z G. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layeras channel grown by MOCVD. Journal of CrystalGrowth, 2007, 298: 835―839
doi: 10.1016/j.jcrysgro.2006.10.219
|
|
Wang X L, Cheng T S, Ma Z Y, Hu G X, Xiao H L, Ran J X, Wang C M, Luo W J. 1-mm gate periphery AlGaN/AlN/GaNHEMTs on SiC with output power of 9.39?W at 8?GHz. Solid-State Electronics, 2007, 51(3): 428―432
doi: 10.1016/j.sse.2006.12.010
|
|
Wang X L, Wang C M, Hu G X, Wang J X, Li J P. Room temperaturemobility above 2100?cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructuresgrown on sapphire substrates by MOCVD. Physica Status Solidi C, 2006, 3(3): 607―610
doi: 10.1002/pssc.200564130
|
|
Wang X L, Chen T S, Xiao H L, Wang C M, Hu G X, Luo W J, Tang J, Guo L C, Li J M. High-performance 2?mm gate width GaN HEMTs on 6H-SiCwith output power of 22.4?W?@?8?GHz. Solid-StateElectronics, 2008, 52(6): 926―929
doi: 10.1016/j.sse.2007.12.014
|
|
Nakamura S, Mukai T, Senoh M. Candela-class high-brightnessInGaN/AlGaN double-heterostructure blue-light-emitting diodes. Applied Physics Letters, 1994, 64(13): 1687―1689
doi: 10.1063/1.111832
|
|
Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K. InGaN/GaN/AlGaN-based laser diodes withmodulation-doped strained-layer superlattices grown on an epitaxiallylaterally overgrown GaN substrate. AppliedPhysics Letters, 1998, 72(2): 211―213
doi: 10.1063/1.120688
|
|
Adivarahan V, Wu S, Zhang J P, Chitnis A, Shatalov M, Mandavilli V, Gaska R, Khan M A. High-efficiency269?nm emission deep ultraviolet light-emitting diodes. Applied Physics Letters, 2004, 84(23): 4762―4764
doi: 10.1063/1.1756202
|
|
Nishida T, Saito H, Kobayashi N. Efficient and high-powerAlGaN-based ultraviolet light-emitting diode grown on bulk GaN. Applied Physics Letters, 2001, 79(6): 711―712
doi: 10.1063/1.1390485
|
|
Martin R W, Edwards P R, Pecharroman-Gallego R, Liu C, Deatcher C J, Watson I M, O'Donnell K P. Light emission ranging from blue to red from a seriesof InGaN/GaN single quantum wells. Journalof Physics D: Applied Physics, 2002, 35(7): 604―608
doi: 10.1088/0022-3727/35/7/306
|
|
Walker D, Kumar V, Mi K, Sandvik P, Kung P, Zhang X H, Razeghi M. Solar-blindAlGaN photodiodes with very low cutoff wavelength. Applied Physics Letters, 2000, 76(4): 403―405
doi: 10.1063/1.125768
|
|
Sandvik P, Walker D, Kung P, Mi K, Shahedipour F, Kumar V, Zhang H, Diaz J, Jelen C, Razeghi M. Solar-blindAlxGa1−xN p-i-n photodetectorsgrown on LEO and non-LEO GaN. Proceedingsof SPIE, 2000, 3948: 265―272
doi: 10.1117/12.382126
|
|
Lambert D J H, Wong M M, Chowdhury U, Collins C, Li T, Kwon H K, Shelton B S, Zhu T G, Campbell J C, Dupuis R D. Back illuminated AlGaN solar-blindphotodetectors. Applied Physics Letters, 2000, 77(12): 1900―1902
doi: 10.1063/1.1311821
|
|
Brown J D, Li J, Srinivasan P, Matthews J, Schetzina J F. Solar-blind AlGaN heterostructurephotodiodes. MRS Internet Journal of NitrideSemiconductor Research, 2000, 5: 9
|
|
Tarsa E J, Kozodoy P, Ibbetson J, Keller B P, Parish G, Mishra U. Solar-blind AlGaN-based invertedheterostructure photodiodes. Applied PhysicsLetters, 2000, 77(3): 316―318
doi: 10.1063/1.126962
|
|
Duboz J Y, Grandjean N, Dussaigne A, Mosca M, Reverchon J L, Verly P G, Simpson R H. Solar blind AlGaN photodetectors with a very high spectralselectivity. The European Physical Journal—Applied Physics, 2006, 33(1): 5―7
doi: 10.1051/epjap:2006002
|
|
Keller S, Denbaars S P. Metalorganic chemical vapor deposition of group III nitrides: a discussionof critical issues. Journal of CrystalGrowth, 2003, 248(1―4): 479―486
doi: 10.1016/S0022-0248(02)01867-5
|
|
Monroy E, Daudin B, Bellet-Amalric E, Gogneau N, Jalabert D, Enjalbert F, Brault J, Barjon J, Dang L S. Surfactant effect of In for AlGaN growthby plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 2003, 93(3): 1550―1556
doi: 10.1063/1.1535734
|
|
Wang X L. Investigations on the epitaxial growth and characteristics of AlGaNwith high Al content via metalorganic chemical vapor deposition. Dissertation for the Doctoral Degree. Beijing: Institute of Semiconductors, 2007, 25
|
|
Bowen D K, Tanner B K. High Resolution X-Ray Diffractometryand Topography. Padstow: CRC Press, 1998, 64
|
|
Palacios T, Monroy E, Calle F, Omnès F. High-responsivity submicron metal-semiconductor-metalultraviolet detectors. Applied PhysicsLetters, 2002, 81(10): 1902―1904
doi: 10.1063/1.1504492
|
|
Wang X Y, Wang X L, Hu G X, Wang B Z, Ma Z Y, Xiao H L, Wang C M, Ran J X, Li J P. Characteristics of high Al content AlxGa1−xN grownby metalorganic chemical vapor deposition. Microelectronics Journal, 2007, 38(8―9): 838―841
doi: 10.1016/j.mejo.2007.07.090
|
|
Parish G. Growthand characterization of aluminum gallium nitride/gallium nitride ultravioletdetectors. Dissertation for the DoctoralDegree. Santa Barbara: University of California, 2001, 12
|
|
Pau J L, Monroy E, Munoz E, Calle F, Sanchez-Garcia M A, Calleja E. Fast AlGaN metal-semiconductor-metalphotodetectors grown on Si(111). ElectronicsLetters, 2001, 37(4): 239―240
doi: 10.1049/el:20010146
|
|
Lee I H. Low darkcurrent Schottky metal-semiconductor-metal photodetectors fabricatedon AlGaN epitaxial layers for visible-blind ultraviolet detection. Physica Status Solidi A, 2002, 192(1): R4―R6
doi: 10.1002/1521-396X(200207)192:1<R4::AID-PSSA99994>3.0.CO;2-N
|
|
Osinsky A, Gangopadhyay S, Yang J W, Gaska R, Kuksenkov D, Temkin H, Shmagin I K, Chang Y C, Muth J F, Kolbas R M. Visible-blind GaN Schottky barrier detectors grown on Si(111). Applied Physics Letters, 1998, 72(5): 551―553
doi: 10.1063/1.120755
|
|
Carrano J C, Grudowski P A, Eiting C J, Dupuis R D, Campbell J C. Current transport mechanisms in GaN-based metal-semiconductor-metalphotodetectors. Applied Physics Letters, 1998, 72(5): 542―544
doi: 10.1063/1.120752
|
|
Burm J, Eastman L F. Low-frequency gain in MSM photodiodes due to charge accumulationand image force lowering. IEEE PhotonicsTechnology Letters, 1996, 8(1): 113―115
doi: 10.1109/68.475796
|
|
Katz O, Garber V, Meyler B, Bahir G, Salzman J. Gainmechanism in GaN Schottky ultraviolet detectors. Applied Physics Letters, 2001, 79(10): 1417―1419
doi: 10.1063/1.1394717
|
|
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