InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices

doi:10.1007/s12200-009-0059-z

Front Optoelec Chin

2009, Vol. 2

Issue (4) : 442-445 https://doi.org/10.1007/s12200-009-0059-z

RESEARCH ARTICLE

InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices

Cao MIAO(

), Hai LU, Dunjun CHEN, Rong ZHANG, Youdou ZHENG

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China

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Abstract

In this study, we fabricated and characterized an InGaN/GaN multi-quantum-well (MQW)-based p-n junction photodetector (PD) for voltage-selective light-emitting and photo-detective applications. The photodetector exhibits a cutoff wavelength at around 460 nm which is close to its electroluminescence (EL) peak position. The rejection ratio was determined to be more than three orders of magnitude. Under zero bias, the responsivity of the device peaks at 371 nm, with a value of 0.068 A/W, corresponding to a 23% quantum efficiency. The overall responsivity gradually rises as a function of reverse bias, which is explained by the enhanced photocarrier collection efficiency.

Keywords GaN multi-quantum-well (MQW) photodetector (PD) light emitting diode (LED)

Corresponding Author(s): MIAO Cao,Email:miaocao321@163.com

Issue Date: 05 December 2009

Cite this article:

Hai LU,Dunjun CHEN,Rong ZHANG, et al. InGaN/GaN multi-quantum-well-based light-emitting and photodetective dual-functional devices[J]. Front Optoelec Chin, 2009, 2(4): 442-445.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-009-0059-z
https://academic.hep.com.cn/foe/EN/Y2009/V2/I4/442

Fig.1 Typical - characteristic of a 1 mm×1 mm InGaN/GaN MQW-based p-n junction photodetector (top and bottom-right insets show a cross-sectional schematic and a top-view image of fabricated device, respectively)

Fig.2 EL spectrum under forward bias ( = 50 mA, dashed line) and spectral response of PD under zero reverse bias (solid line)

Fig.3 Responsivity curves of PD under different reverse bias voltages

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