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Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode |
Feng WEN, Lirong HUANG(), Liangzhu TONG, Dexiu HUANG, Deming LIU |
Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China |
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Abstract Blue and green dual wavelength InGaN/GaN multi-quantum well (MQW) light-emitting diode (LED) has wide applications in full color display, monolithic white LED and solid state lighting, etc. Blue and green dual wavelength LEDs, which consist of InGaN strain-reduction layer, green InGaN/GaN MQW and blue InGaN/GaN MQW, were grown by metal-organic chemical vapor deposition (MOCVD), and the luminescence properties of dual wavelength LEDs with different well arrangements were studied by photoluminescence and electroluminescence. The experimental results indicated that well position played an important role on the luminescence evolvement from photoluminescence to electroluminescence.
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Keywords
multi-quantum well (MQW)
luminescence
dual-wavelength
metal-organic chemical vapor deposition (MOCVD)
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Corresponding Author(s):
HUANG Lirong,Email:hlr5649@163.com
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Issue Date: 05 December 2009
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