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InAs/GaAs quantum dots grown on different GaAs
substrates with graded In x Ga 1? x As strain-reducing layer |
| Shuping FEI,Zhongwei SHI,Lirong HUANG, |
| Wuhan National Laboratory
for Optoelectronics, College of Optoelectronic Science and Engineering,
Huazhong University of Science and Technology, Wuhan 430074, China; |
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Abstract Self-assembled InAs quantum dots with graded composition strain-reducing layer (SRL) grown on exact substrates were studied. It is shown that a graded InxGa1−xAs SRL leads to growth quality improvement, emission efficiency enhancement, and wavelength blueshift. Samples grown on 2° misoriented substrates with different In contents in graded InxGa1−xAs SRL were also investigated, and emission efficiency enhancement and wavelength blueshift were found when graded SRL was introduced and when the change rate of In content in graded InxGa1−xAs SRL was enlarged.
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Issue Date: 05 September 2010
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