Synthesis and optoelectronic properties of silver-doped n-type CdS nanoribbons

doi:10.1007/s12200-011-0153-x

Front Optoelec Chin

2011, Vol. 4

Issue (2) : 161-165 https://doi.org/10.1007/s12200-011-0153-x

RESEARCH ARTICLE

Synthesis and optoelectronic properties of silver-doped n-type CdS nanoribbons

Chunyan WU, Li WANG, Zihan ZHANG, Xiwei ZHANG, Qiang PENG, Jiajun CAI, Yongqiang YU, Huier GUO, Jiansheng JIE(

)

School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China

Download: PDF(290 KB) HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract

Sliver doped n-type CdS nanoribbons (NRs) were successfully synthesized by using Ag₂S as the dopant via a thermal co-evaporation method. The CdS:Ag NRs have wurtzite single-crystal structure with growth direction of [110]. Significantly, the conductivity of the CdS NRs increased ~6 orders of magnitude by silver doping. Moreover, the Ag doped CdS NRs showed much enhanced photoconductivity compared with the undoped ones, which will greatly favor the application of CdS nanostructures in high-performance nano-optoelectronic devices.

Keywords CdS nanoribbons silver doping nanodevices nano-field effect transistors photoconductivity

Corresponding Author(s): JIE Jiansheng,Email:jason.jsjie@gmail.com

Issue Date: 05 June 2011

Cite this article:

Chunyan WU,Li WANG,Zihan ZHANG, et al. Synthesis and optoelectronic properties of silver-doped n-type CdS nanoribbons[J]. Front Optoelec Chin, 2011, 4(2): 161-165.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-011-0153-x
https://academic.hep.com.cn/foe/EN/Y2011/V4/I2/161

Fig.1 XRD pattern of as-prepared CdS:Ag NRs

Fig.2 Morphologies and structures of CdS:Ag NRs. (a) Typical FE-SEM image (inset shows EDS spectrum); (b) low-resolution TEM image (inset shows corresponding SAED pattern); (c) HRTEM image

Fig.3 Electrical and photoconductive properties of CdS:Ag NRs. (a) Typical - curves of CdS NRs (doped and intrinsic) in dark (inset shows photo of typical device based on single CdS:Ag NRs); (b) conductivity distribution of 20 CdS:Ag NRs in dark and upon light illumination; (c) time response of sample CA; (d) time response of sample C0 (LED white light from microscopy was turn on/off manually; was fixed at 5 V)

Fig.4 Transport characteristics of back-gate nano-FET based on CdS:Ag NR. (a) Schematic illustration; (b) - curves measured at varied ( increases from 0 to 40 V in a step of 10 V); (c) - curve at =1 V

1	Zheng G F, Lu W, Jin S, Lieber C M. Synthesis and fabrication of high-performance n-type silicon nanowire transistors. Advanced Materials, 2004, 16(21): 1890–1893 doi: 10.1002/adma.200400472
2	Huang Y, Duan X F, Lieber C M. Nanowires for integrated multicolor nanophotonics. Small, 2005, 1(1): 142–147
3	Cui Y, Wei Q Q, Park H K, Lieber C M. Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species. Science , 2001, 293(5533): 1289–1292 doi: 10.1126/science.1062711
4	Wang J F, Gudiksen M S, Duan X F, Cui Y, Lieber C M. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires. Science , 2001, 293(5534): 1455–1457 doi: 10.1126/science.1062340
5	Pan Z W, Dai Z R, Wang Z L. Nanobelts of semiconducting oxides. Science , 2001, 291(5510): 1947–1949 doi: 10.1126/science.1058120
6	Liu Y K, Zapien J A, Geng C Y, Shan Y Y, Lee C S, Lifshitz Y, Lee S T. High-quality CdS nanoribbons with lasing cavity. Applied Physicals Letters, 2004, 85(15): 3241–3243 doi: 10.1063/1.1805714
7	Jie J S, Zhang W J, Jiang Y, Meng X M, Li Y Q, Lee S T. Photoconductive characteristics of single-crystal CdS nanoribbons. Nano Letters, 2006, 6(9): 1887–1892 doi: 10.1021/nl060867g
8	Liu Y K, Zapien J A, Shan Y Y, Geng C Y, Lee C S, Lee S T. Wavelength-controlled lasing in Zn_xCd_1–xS single-crystal nanoribbons. Advanced Materials, 2005, 17(11): 1372–1377 doi: 10.1002/adma.200401606
9	Jie J S, Zhang W J, Bello I, Lee C S, Lee S T. One-dimensional II-VI nanostructures: synthesis, properties and optoelectronic applications. Nano Today, 2010, 5(4): 313–336 doi: 10.1016/j.nantod.2010.06.009
10	Duan X F, Huang Y, Agarwal R, Lieber C M. Single-nanowire electrically driven lasers. Nature , 2003, 421(6920): 241–245 doi: 10.1038/nature01353
11	Wu D, Jiang Y, Wang L, Li S Y, Wu B, Lan X Z, Yu Y Q, Wu C Y, Wang Z B, Jie J S. High-performance CdS:P nanoribbon field-effect transistors constructed with high-k dielectric and top-gate geometry. Applied Physics Letters, 2010, 96(12): 123118 doi: 10.1063/1.3360206
12	Jie J S, Zhang W J, Jiang Y, Lee S T. Transport properties of single-crystal CdS nanoribbons. Applied Physics Letters, 2006, 89(22): 223117 doi: 10.1063/1.2398891
13	Gao T, Li Q H, Wang T H. CdS nanobelts as photoconductors. Applied Physics Letters, 2005, 86(17): 173105 doi: 10.1063/1.1915514
14	George P J, Sanchez A, Nair P K, Nair M T S. Doping of chemically deposited intrinsic CdS thin films to n type by thermal diffusion of indium. Applied Physics Letters, 1995, 66(26): 3624–3626 doi: 10.1063/1.113808
15	Kokaj J, Rakhshani A E. Photocurrent spectroscopy of solution-grown CdS films annealed in CdCl₂ vapour. Journal of Physics D: Applied Physics, 2004, 37(14): 1970–1975 doi: 10.1088/0022-3727/37/14/012
16	Ristova M, Ristov M, Tosev P, Mitreski M. Silver doping of thin CdS films by an ion exchange process. Thin Solid Films, 1998, 315(1–2): 301–304 doi: 10.1016/S0040-6090(97)00476-8
17	McEvoy A J, Gratzel M. Sensitization in photochemistry and photovoltaics. Solar Energy Materials and Solar Cells, 1994, 32(3): 221–227 doi: 10.1016/0927-0248(94)90260-7
18	Wang C Z, E Y F, Fan L Z, Yang S H, Li Y L. CdS-Ag nanocomposite arrays: enhanced electro-chemiluminescence but quenched photoluminescence. Journal of Materials Chemistry , 2009, 19(23): 3841–3846 doi: 10.1039/b821213a
19	Liu S X, Qu Z P, Han X W, Sun C L. A mechanism for enhanced photocatalytic activity of silver-loaded titanium dioxide. Catalysis Today, 2004, 93–95: 877–884 doi: 10.1016/j.cattod.2004.06.097
20	Jia W L, Douglas E P, Guo F G, Sun W F. Optical limiting of semiconductor nanoparticles for nanosecond laser pulses. Applied Physics Letters, 2004, 85(26): 6326–6328 doi: 10.1063/1.1836871
21	He Z B, Jie J S, Zhang W J, Zhang W F, Luo L B, Fan X, Yuan G D, Bello I, Lee S T. Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping. Small, 2009, 5(3): 345–350 doi: 10.1002/smll.200801006
22	Soci C, Zhang A, Xiang B, Dayeh S A, Aplin D P R, Park J, Bao X Y, Lo Y H, Wang D. ZnO nanowire UV photodetectors with high internal gain. Nano Letters, 2007, 7(4): 1003–1009 doi: 10.1021/nl070111x

[1]	Qi JIN,Jinsong LIU,Kejia WANG,Zhengang YANG,Shenglie WANG,Kefei YE. Oscillation effect in frequency domain current from a photoconductive antenna via double-probe-pulse terahertz detection technique[J]. Front. Optoelectron., 2015, 8(1): 104-109.
[2]	Li LIU, Ze ZHANG. Facile solvothermal synthesis and photoconductivity of one-dimensional organic Cd(II)-Schiff-base nanoribbons[J]. Front Optoelec Chin, 2011, 4(2): 199-203.

Viewed

Full text

Abstract

Cited

Shared

Discussed