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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

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Front Optoelec Chin    2011, Vol. 4 Issue (2) : 137-140    https://doi.org/10.1007/s12200-011-0155-8
RESEARCH ARTICLE
Growth of large size AgGaGeS4 crystal for infrared conversion
Haixin WU(), Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG
Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
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Abstract

Single crystals of AgGaGeS4 (AGGS) were grown in a modified Bridgman furnace with 25 mm in diameter and 70 mm in length. The transmission spectra of as-grown AGGS slices were measured on a Hitachi 270-30 spectrophotometer, the fabricated device crystal was 5 mm×5 mm×3.5 mm in dimension and its absorption was 0.04–0.15 cm-1. Frequency doubling of 2.79 and 8 μm laser radiation were investigated using fabricated device crystals with thicknesses of 3.5 and 2.7 mm respectively.
Keywords crystal growth      Bridgman technique      AgGaGeS4 (AGGS)      frequency doubling     
Corresponding Author(s): WU Haixin,Email:hxwu@ircrystal.com   
Issue Date: 05 June 2011
 Cite this article:   
Haixin WU,Youbao NI,Chen LIN, et al. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Front Optoelec Chin, 2011, 4(2): 137-140.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-011-0155-8
https://academic.hep.com.cn/foe/EN/Y2011/V4/I2/137
Fig.1  Photograph of as-grown AGGS boule
Fig.1  Photograph of as-grown AGGS boule
Fig.2  XRD pattern of synthesized polycrystalline, which was agreed well with card for AGGS of JCPDS 72–1912
Fig.2  XRD pattern of synthesized polycrystalline, which was agreed well with card for AGGS of JCPDS 72–1912
Fig.3  (a) XRD spectrum of {004} faces ; (b) rocking curve of (004) face
Fig.3  (a) XRD spectrum of {004} faces ; (b) rocking curve of (004) face
Fig.4  Image of single crystal upper letters “AGGS”
Fig.4  Image of single crystal upper letters “AGGS”
Fig.5  (a) Transparency measured with unpolaried light of AGGS slice with thickness of 3.5 mm (broken line indicates reflectivity limit); (b) optical absorption spectrum in region of 0.5-12.5 μm
Fig.5  (a) Transparency measured with unpolaried light of AGGS slice with thickness of 3.5 mm (broken line indicates reflectivity limit); (b) optical absorption spectrum in region of 0.5-12.5 μm
Fig.6  Angular tuning characteristics of second harmonic generation in AGGS crystal for type I phase-matching in plane (solid curve is theoretical prediction obtained from Sellemeier coefficients reported by Petrov et al. [], and stars * represent our experiment measured values for SHG of 2.79 and 8.0 μm, respectively)
Fig.6  Angular tuning characteristics of second harmonic generation in AGGS crystal for type I phase-matching in plane (solid curve is theoretical prediction obtained from Sellemeier coefficients reported by Petrov et al. [], and stars * represent our experiment measured values for SHG of 2.79 and 8.0 μm, respectively)
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[1] Youbao NI, Haixin WU, Mingsheng MAO, Chen LIN, Ganchao CHENG, Zhenyou WANG. Synthesis and growth of nonlinear infrared crystal material CdSe via seeded oriented temperature gradient solution zoning method[J]. Front Optoelec Chin, 2011, 4(2): 141-145.
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