Influence of V/III ratio on QD size distribution

doi:10.1007/s12200-011-0180-7

Front Optoelec Chin

2011, Vol. 4

Issue (4) : 364-368 https://doi.org/10.1007/s12200-011-0180-7

RESEARCH ARTICLE

Influence of V/III ratio on QD size distribution

Zhongwei SHI, Lirong HUANG(

), Yi YU, Peng TIAN, Hanchao WANG

Wuhan National Laboratory for Optoelectronics, College of Optoelectonic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

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Abstract

The influence of V/III ratio on the formation of quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD) is investigated by atomic force microscopy (AFM) and photoluminescence (PL) measurements. As V/III ratio increases, the density of QDs decreases accompanied by the transition of QD size distribution from bimodal (at V/III= 9) to single-modal (at V/III= 15), and then to bimodal (at V/III= 25) again, which is attributed to the change of the indium-species migration length at different V/III ratios. There are PL spectrum redshifts and the PL peak intensity decreases as V/III ratio increases.

Keywords quantum dots (QDs) V/III ratio QD size distribution photoluminescence (PL)

Corresponding Author(s): HUANG Lirong,Email:hlr5694@163.com

Issue Date: 05 December 2011

Cite this article:

Zhongwei SHI,Lirong HUANG,Yi YU, et al. Influence of V/III ratio on QD size distribution[J]. Front Optoelec Chin, 2011, 4(4): 364-368.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-011-0180-7
https://academic.hep.com.cn/foe/EN/Y2011/V4/I4/364

Fig.1 Diameter distributions of samples A, B, and C

Tab.1 Growth parameters and experimental results for samples A, B and C

Fig.2 Size distribution histograms of samples D, E and F

Tab.2 Growth parameters and experimental results for samples D, E and F

Fig.3 PL spectra of samples D, E and F

Fig.4 Gaussian fitting PL of sample F

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