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Frontiers of Optoelectronics

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Front Optoelec Chin    2011, Vol. 4 Issue (4) : 349-358    https://doi.org/10.1007/s12200-011-0188-z
RESEARCH ARTICLE
Analysis of TiO2 for microelectronic applications: effect of deposition methods on their electrical properties
Davinder RATHEE1(), Sandeep K ARYA1, Mukesh KUMAR2
1. Department of Electronics and Communication Engineering, Guru Jambheshwar University of Science & Technology, Hisar, India; 2. Department of Electronics Science, Kurukshetra University, Kurukshetra, India
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Abstract

Metal oxide semiconductor (MOS) device down-scaling is a powerful driving force for the evolution of microelectronics. The downsizing rate of metal oxide semiconductor field effect transistors (MOSFETs) is really marvelous. Silicon dioxide (SiO2) has served as a perfect gate dielectric for the last four decades. Due to physical limitations, leakage current, high interface trap charge it now needs to be replaced with higher permittivity dielectric material. Keeping the motivation for the search of high-k materials, extensive studies have been carried out on several metal oxides, such as ZrO2, Ta2O5, TiO2, Al2O3 and HfO2 for the replacement of SiO2. The high dielectric constant (k) of titanium dioxide (TiO2) will open multifaceted prospects for the use of this material in microelectronic devices. In this paper, a comparative study of various deposition methods for fabrication of thin TiO2 films has been presented. This work uses a combination of simulation results, experimental data and critical analysis of published data. Further, an experiment using sol-gel method has been carried out to deposit thin films of TiO2. It has been characterized and compared with the earlier reported fabrication methods. The X-ray diffraction analyses and Raman spectra indicate the presence of anatase TiO2 phase in the film. The dielectric constant as calculated using capacitance-voltage (C-V) analysis was found to be 23. The refractive index of the film was 2.43. The TiO2 films studied for microelectronic applications and present acceptable properties such as low leakage current density of 1.0×10-5 A/cm at 1 V and band gap of 3.6 eV. The leakage current has been found to be dominant by the Schottky emission at lower electric field, while Flower-Nordheim (F-N) tunneling occurs at higher biasing voltages.
Keywords titanium dioxide (TiO2)      high-k material      sol-gel      thin films      atomic force microscopy (AFM)      capacitance-voltage (C-V) analysis     
Corresponding Author(s): RATHEE Davinder,Email:jerry_2c@yahoo.com   
Issue Date: 05 December 2011
 Cite this article:   
Sandeep K ARYA,Mukesh KUMAR,Davinder RATHEE. Analysis of TiO2 for microelectronic applications: effect of deposition methods on their electrical properties[J]. Front Optoelec Chin, 2011, 4(4): 349-358.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-011-0188-z
https://academic.hep.com.cn/foe/EN/Y2011/V4/I4/349
Fig.1  Unit lattice crystalline structure
Fig.2  Experimental setup for chemical process
Fig.3  SEM and AFM images of thin TiO films annealed at 550oC. (a) FESEM image; (b) AFM image
Fig.4  XRD spectra of (a) TiO film deposited on silicon wafer annealed at 550°C; (b) titanium oxide film annealed at 850°C
Fig.5  Raman spectra of TiO thin film annealed at 550°C
Fig.6  - characteristics of Si/TiO/Al structure
Fig.7  Current voltage characteristics of MOS capacitor with TiO film with Al top electrode
Fig.8  SE plot of measured data
Fig.9  F-N tunneling for TiO gives conduction band offset 0.83 eV. Upper inset shows the current-voltage plot in the range of 0 to±6 V
Fig.10  DSC-TGA analysis of TiO thin films
dielectric constantband gap /eVformation temperature/°Csilicide formationthermal stability/°Cinterface trap density/(eV-1·cm-2)oxide trap density /cm2breakdown field/(MV·cm-1)capacitance (Cox)/(F·cm-2)flat band voltage (Vfb)/Vthreshold voltage (Vt)/Vbulk potential(Φf)low leakage current density wrt SiO2/(A·cm-2)
22-403.6400NA5501.1 × 10128.9 × 1012 <45.85×10-80.371.20.35101-102
Tab.1  Various characteristics of nanocrystalline TiO ultra thin film grown by sol-gel
electric field /(MV·cm-1)thermal (12 nm)e-beam (15 nm)sputtering (13.6 nm)PECVD (15 nm)sol-gel spin (52 nm)
leakage current density003.16 × 10-6
0.53.16 × 10-81.00 × 10-61.25 × 10-53.98 × 10-71.00 × 10-4
13.16 × 10-71.00 × 10-61.58 × 10-56.30 × 10-51.00 × 10-3
1.53.98 × 10-63.16 × 10-51.99 × 10-47.94 × 10-51.26 × 10-3
26.30 × 10-63.98 × 10-45.01 × 10-31.00 × 10-41.58 × 10-3
2.51.58 × 10-56.30 × 10-46.30 × 10-31.25 × 10-41.58 × 10-3
35.01 × 10-51.007.94 × 10-31.58 × 10-41.58 × 10-3
3.51.001.99 × 10-41.99 × 10-3
refractive index2.2-2.52.12.53-2.722.12-2.562.33
optical dielectric constant4.84-6.254.416.40094.49445.428
band gap/eV3.2-3.52.693.03.253.4
heat treatment/°C550-750600700-1000300-450400-550
dielectric constant15-402315-2520-3526-80
merits/applicationcan be used as gate dielectric materialbest photocataystics material, junction based devicesmicroelectronic materials, enhance mobility MOSFETsolar cell, insulating memory devices, fiber optical sensorsnext generation high-k dielectric material for MOS, chip
drawbackshigher leakage current density5 nm roughness in surface,leakage currentmass fabrication is expensivemass fabrication is expensivehigher silicon/ dielectric interface density
Tab.2  Comparison of main features of existing deposition methods versus our sample
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