Spontaneous emission rate enhancement of nano-structured silicon by surface plasmon polariton

doi:10.1007/s12200-012-0185-x

Front Optoelec

2012, Vol. 5

Issue (1) : 51-62 https://doi.org/10.1007/s12200-012-0185-x

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Spontaneous emission rate enhancement of nano-structured silicon by surface plasmon polariton

Xue FENG, Fang LIU, Yidong HUANG(

)

State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

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Abstract

Surface plasmon polariton (SPP) is an attractive candidate to improve internal quantum efficiency (QE) of spontaneous emission (SE) from nano-structured silicon (Si) including nano-porous silicon (NP-Si) and silicon nanocrystal (Si-NC). Since the SPP resonant frequency of common metals, e.g., gold (Au), silver (Ag), copper (Cu), and aluminum (Al), is too high, the SPP resonance has to be engineered to match the luminescence from nano-structured Si. For this purpose, we have proposed and demonstrated three approaches including metal-rich Au(1-α)-SiO₂(α) cermet SPP waveguide (WG), compound layer structure WG and metallic grating. In this paper, those approaches are reviewed and discussed. According to the calculated results, such three methods could effectively enhance SE rate from NP-Si or Si-NCs and show potential in developing high efficiency Si based light sources with electric pump.

Keywords spontaneous emission (SE) silicon nanocrystal (Si-NC) surface plasmon polariton (SPP) Purcell effect

Corresponding Author(s): HUANG Yidong,Email:yidonghuang@tsinghua.edu.cn

Issue Date: 05 March 2012

Cite this article:

Xue FENG,Fang LIU,Yidong HUANG. Spontaneous emission rate enhancement of nano-structured silicon by surface plasmon polariton[J]. Front Optoelec, 2012, 5(1): 51-62.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0185-x
https://academic.hep.com.cn/foe/EN/Y2012/V5/I1/51

Fig.1 Schematic of SPP at metal-dielectric interface and reference coordinate system

Fig.2 Dependence on SiO volume fraction of plasmon frequency (square) and high frequency dielectric constant (circle) in Drude model of metal-rich cermet. Inset: schematic structure of nanoporous Si layer with a Au(1-)-SiO() cermet WG

Fig.3 (a) Dispersion of Au(1-)-SiO() cermet WG with different components. Inset: typical PL spectrum of NP-Si. Shaded area corresponds to frequency range between two half-maxima; (b) PF with different components versus photon energy . Inset: increase of PF with the increase of SiO volume fraction , fixing the photon energy at 1.718 eV

Fig.4 Distributions of internal QE with and without cermet WG

Fig.5 Schematic of monolayer and double layer structures

Fig.6 || and PF distributions in (a) monolayer; (b) double layer; SP WG ( = = 30 nm). The calculated ||field and PF are shown as lines and circles, respectively. And different colors indicates two components of =0 and 0.2

Fig.7 (a) Ag/Ag-poor cermet SPP WG; (b) SPP WG with pure Au or Ag film; (c) two-layer SPP WG

Fig.8 (a) Dispersion of Au, Ag, Ag/Ag-poor cermet SP WG; (b) dispersion of the Ag/Ag-poor cermet SP WG with different SiN fractions

Fig.9 Dependence on SiN fraction of (a) DOS; (b) PF with different thicknesses of Ag-poor cermet layer, fixing the photon energy at 1.7106 eV (equivalent to the wavelength at 725 nm). The yellow and wine dot lines are the reference results of 20 nm thick Au and Ag film, respectively

Fig.10 Schematic cylindrical periodic dielectric-metal interface and reference coordinate system. Interface consists of dielectric in the region >() and metal in the region <()

Fig.11 Calculated dispersion curves for Cu-SiN interface with sinusoidal shape with period = 90-140 nm and depth = 0.1

Fig.12 Normalized spatial distribution of magnetic field normal to symmetry ||: (a) for low frequency mode; (b) high frequency mode at BE-frequency. The regions of high field strength are shown as white

Fig.13 Calculated PF distribution for Cu-SiN grating within range of 30 nm≤≤270 nm and -120 nm≤≤120 nm by setting = 120 nm and = 0.1. Regions of high PFs are shown as white

Fig.14 Calculated max PF and related BE-frequency versus various period for sinusoidal shaped Au, Cu, Ag and Al-SiN interface with = 0.1

Fig.15 Enhanced QE versus various PF and original QE for (a) 1%<<10% and (b) 10%<<60%

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