Design of unidirectional emission silicon/III-V laser for on-chip interconnects

doi:10.1007/s12200-012-0190-0

Front Optoelec

2012, Vol. 5

Issue (1) : 94-98 https://doi.org/10.1007/s12200-012-0190-0

RESEARCH ARTICLE

Design of unidirectional emission silicon/III-V laser for on-chip interconnects

Chucai GUO^1,2, Yongzhen HUANG¹(

), Yuede YANG¹, Xiaomeng LV¹, Qifeng YAO¹

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2. College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China

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Abstract

We propose a unidirectional emission silicon/III-V laser, which comprises an III-V quantum wells microdisk connected to an output waveguide and a silicon-on-insulator (SOI) waveguide. Characteristics of the III-V microdisk with an output waveguide and mode coupling between the III-V output waveguide and the SOI waveguide are investigated by three-dimensional (3D) finite-difference time-domain (FDTD) method. Simulation results show that the Q factor of a coupled mode for a 7.5 μm diameter microdisk connected to a 0.5 μm wide output waveguide is about 8.5×10⁴. And the coupling efficiency between the III-V output waveguide and the SOI waveguide is over 96% when the III-V waveguide width is 0.5 μm, the SOI waveguide width is 0.565 μm and the vertical gap between those two waveguides is 0.1 μm. The proposed hybrid laser would be of valuable applications for on-chip interconnects.

Keywords silicon/III-V laser unidirectional emission three-dimensional (3D) finite-difference time-domain (FDTD) method on-chip interconnects

Corresponding Author(s): HUANG Yongzhen,Email:yzhuang@semi.ac.cn

Issue Date: 05 March 2012

Cite this article:

Yongzhen HUANG,Yuede YANG,Xiaomeng LV, et al. Design of unidirectional emission silicon/III-V laser for on-chip interconnects[J]. Front Optoelec, 2012, 5(1): 94-98.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0190-0
https://academic.hep.com.cn/foe/EN/Y2012/V5/I1/94

Fig.1 Schematic figure of unidirectional silicon/III-V hybrid laser

Fig.2 Intensity spectrum for microdisk with output waveguide obtained by FDTD simulation and Padé approximation

Fig.3 Intensity spectra for perfect microdisk without output waveguide. Two resonant modes correspond to modes (a) A; (b) B; (c) C in Fig. 2

Fig.4 Magnetic field component distribution of mode A in Fig. 2 at (a) center plane of gain material layer; (b) plane. Field in output waveguide is magnified 30 times

Fig.5 Effective index of fundament mode as function of mode wavelength for III-V waveguide and three SOI waveguides with different widths

Fig.6 distribution of fundament mode at the cross section of (a) III-V waveguide and (b) SOI waveguide with = 565 nm

Fig.7 Steady-state distribution of at (a) plane of coupled waveguides; (b) center plane of III-V waveguide; and (c) center plane of SOI waveguide

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