Improved extinction ratio of Mach-Zehnder based optical modulators on CMOS platform

doi:10.1007/s12200-012-0197-6

Front Optoelec

2012, Vol. 5

Issue (1) : 90-93 https://doi.org/10.1007/s12200-012-0197-6

RESEARCH ARTICLE

Improved extinction ratio of Mach-Zehnder based optical modulators on CMOS platform

Zhiyong LI(

), Liang ZHOU, Xi XIAO, Tao CHU, Yude YU, Jinzhong YU

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors (IS), Chinese Academy of Sciences (CAS), Beijing 100083, China

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Abstract

Silicon based optical modulators with improved extinction ratio (ER) of 25 dB were demonstrated on complementary metal oxide semiconductor (CMOS) platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3.2 Gbps.

Keywords silicon photonics optical modulator extinction ratio (ER) integration

Corresponding Author(s): LI Zhiyong,Email:lizhy@semi.ac.cn

Issue Date: 05 March 2012

Cite this article:

Zhiyong LI,Liang ZHOU,Jinzhong YU, et al. Improved extinction ratio of Mach-Zehnder based optical modulators on CMOS platform[J]. Front Optoelec, 2012, 5(1): 90-93.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0197-6
https://academic.hep.com.cn/foe/EN/Y2012/V5/I1/90

Fig.1 Microscope image of MZ modulator fabricated in CMOS foundry

Fig.2 Optical spectra for undoped and boron doped asymmetric MZs in silicon

Fig.3 SEM images. (a) Rib optical waveguide; (b) grating coupler for light in and out vertically

Fig.4 Optical spectra of asymmetric MZ modulator biased at the forward voltages from 0 to 1.8 V

Fig.5 - curve of PN diode for integrated active components

Fig.6 Measured modulator response at the transmission rate of 3.2 Gbps

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