Ge-on-Si for Si-based integrated materials and photonic devices

doi:10.1007/s12200-012-0200-2

Front Optoelec

2012, Vol. 5

Issue (1) : 41-50 https://doi.org/10.1007/s12200-012-0200-2

REVIEW ARTICLE

Ge-on-Si for Si-based integrated materials and photonic devices

Weixuan HU, Buwen CHENG(

), Chunlai XUE, Shaojian SU, Haiyun XUE, Yuhua ZUO, Qiming WANG

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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Abstract

This paper reviews the recent progress in photonic devices application of Ge-on-Si. Ge-on-Si materials and optical devices are suitable candidates for Si-based optoelectronic integration because of the mature epitaxial technique and the compatibility with Si complementary metal-oxide-semiconductor (CMOS) technology. Recently, the realities of electric-pump Ge light emitting diode (LED) and optical-pump pulse Ge laser, Ge quantum well modulator based on quantum Stark confined effect, waveguide Ge modulator based on Franz-Keldysh (FK) effect, and high performance near-infrared Ge detector, rendered the Si-based optoelectronic integration using Ge photonic devices. Ge-on-Si material is also an important platform to grow other materials on it for Si-based optoelectronic integration. InGaAs and GeSn have been grown on the Ge-on-Si. InGaAs LED and GeSn photodetector have been successfully fabricated as well.

Keywords optoelectronic integration Ge photonic device

Corresponding Author(s): CHENG Buwen,Email:cbw@semi.ac.cn

Issue Date: 05 March 2012

Cite this article:

Weixuan HU,Buwen CHENG,Chunlai XUE, et al. Ge-on-Si for Si-based integrated materials and photonic devices[J]. Front Optoelec, 2012, 5(1): 41-50.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0200-2
https://academic.hep.com.cn/foe/EN/Y2012/V5/I1/41

Fig.1 EL spectra of the device. The bias was ranging from 1.1 to 2.5 V. The peak shift curve is also shown in the figure

Fig.2 Ge absorption coefficient spectra under external electric field of 12.5 and 62.5 KV/cm

Fig.3 Photocurrent spectrum of Ge quantum well modulator (with 10 pairs of 10 nm Ge wells and 18 nm SiGe barriers) with reverse bias from (a) 0 to 1.5 V and (b) 1.5 to 3.0 V

Fig.4 Schematic cross-section view of double mesa structure of Ge p-i-n photodetector

Tab.1 Performance comparison for different normal-incidence Ge photodetector designs

Tab.2 Performance comparison for different waveguide Ge photodetector designs

Fig.5 Schematic cross-section view of Ge/Si SACM APD

Fig.6 - characteristics at darkness and with illumination by 1310 nm light of 30 μm-diameter detector for different illuminate optical power

Fig.7 Measured multiplication gain as a function of bias at a wavelength of 1310 nm. The primary photoresponsivity used to obtain gain is 0.50 A/W measured from Ge p-i-n devices fabricated with the same Ge thickness

Fig.8 Cross section TEM images of InGaAs on (a) 300nm, (b) 550 nm and (c) 1020 nm Ge/offcut Si(001) virtual substrate. The GaAs islands on InGaAs/Ge interface are indicated by dash circles. The solid arrows show the TD reduction in Ge/offcut Si. In inset (d), the EDS along the black line through a GaAs island is shown.

Fig.9 Schematic cross-section view of InGaAs LED

Fig.10 Room temperature EL spectra of InGaAs/Ge/offcut Si LED

Fig.11 (a) X-ray transmission electron microscope (XTEM) image of the GeSn alloy; the inset is the selected area electron diffraction pattern taken from the GeSn layer; (b) high resolution TEM micrograph of the GeSn/Ge interface

Fig.12 Schematic cross-section view of GeSn detector on Si

Fig.13 Responsivity versus wavelength at -1 V along with photocurrent spectrum of a 100 μm diameter GeSn detector. The responsivities were measured using lasers while the photocurrent spectrum was measured at 0 V using a Fourier transform infrared spectrometer

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