Highly efficient silicon light emitting diodes produced by doping engineering

doi:10.1007/s12200-012-0226-5

Front Optoelec

2012, Vol. 5

Issue (1) : 7-12 https://doi.org/10.1007/s12200-012-0226-5

REVIEW ARTICLE

Highly efficient silicon light emitting diodes produced by doping engineering

Jiaming SUN¹(

), M. HELM², W. SKORUPA², B. SCHMIDT², A. MüCKLICH²

1. Key Laboratory of Weak Light Nonlinear Photonics Ministry of Education, Nankai University, Tianjin 300071, China; 2. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01314, Germany

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Abstract

This paper reviews our recent progress on silicon (Si) pn junction light emitting diodes with locally doping engineered carrier potentials. Boron implanted Si diodes with dislocation loops have electroluminescence (EL) quantum efficiency up to 0.12%, which is two orders of magnitude higher than those without dislocations. Boron gettering along the strained dislocation lines produces locally p-type spike doping at the dislocations, which have potential wells for bounding spatially indirect excitons. Thermal dissociation of the bound excitons releases free carriers, leading to an anomalous increase of the band to band luminescence with increasing temperature. Si light emitting diodes with external quantum efficiency of 0.2% have been also demonstrated by implementation of pnpn modulation doping arrays.

Keywords silicon (Si) light emitting diodes doping engineering dislocation modulation doping

Corresponding Author(s): SUN Jiaming,Email:jmsun@nankai.edu.cn

Issue Date: 05 March 2012

Cite this article:

Jiaming SUN,M. HELM,W. SKORUPA, et al. Highly efficient silicon light emitting diodes produced by doping engineering[J]. Front Optoelec, 2012, 5(1): 7-12.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0226-5
https://academic.hep.com.cn/foe/EN/Y2012/V5/I1/7

Fig.1 XTEM images of Si pn diodes prepared by B implantation at 25 keV with doses of (a) 4×10 cm and (b) 2.0×10 cm plus Si implantation at 50 keV with a dose of 1.5×10 cm

Fig.2 EL spectra at 12 K of Si pn diodes prepared by B implantation at 25 keV with different doses of 4.0×10 cm (A), and 2.0×10 cm (B). The reference sample (B*) are produced by B implantation with a small dose of 2.0×10 cm plus Si implantation at 50 keV with a dose of 1.5×10 cm for creation of dislocations

Fig.3 EL spectra at room temperature from Si pn diodes prepared by B implantation at 25 keV with different doses of 4.0×10 cm (A), and 2.0×10 cm (B). The reference sample (B*) produced by B implantation with a dose of 2.0×10 cm plus Si implantation at 50 keV with a dose of 1.5×10 cm

Fig.4 Dependences of energies of EL peaks from dislocations on logarithm of injection current density at 12 K. EL peaks and are from dislocations in pn diode (A) generated by high dose boron implantation; EL peaks D and P are from dislocations in the reference pn diode (B*) created by Si implantation

Fig.5 Energy band diagram and electronic transitions in Si pn diode with heavy p-type doping spikes (a); recombination of spatially indirect bound excitons related to EL peaks and at strained and unstrained dislocations in low and high current injection regimes (b)

Fig.6 Integrated EL intensity of FE (squares), (dots) and (uptrangles) as a function of temperature from diode implanted with B at 25 keV with a dose of 4×10 cm. Solid line: guide to the eyes; dotted and dashed lines: theoretical fitting to temperature dependences of and

Fig.7 Images of 0.5 m ×0.5 mm Si light emitting diode containing micro heavy p-doping arrays extended into n-type Si substrate. B ions are implanted into Si at 25 keV with a dose of 4×10 cm through micro holes on 150 nm SiO mask layer. Micro windows have an area of 2 μm×2 μm with a space of 4 μm

Fig.8 Dependences of room temperature EL intensity on injection current for two Si pn diodes with and without patterned doping fabricated on the same chip

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