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Front Optoelec    2012, Vol. 5 Issue (2) : 157-170    https://doi.org/10.1007/s12200-012-0237-2
REVIEW ARTICLE
Vertical-external-cavity surface-emitting lasers and quantum dot lasers
Guangcun SHAN1,2(), Xinghai ZHAO1,3, Mingjun HU2, Chan-Hung SHEK2, Wei HUANG4
1. State Key Laboratory of Functional Materials for Informatics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China; 3. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China; 4. Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
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Abstract

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells (QWs) to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. In this review, we will cover both fundamental aspects and technological approaches of QD VECSEL devices. Lastly, the presented review here has provided deep insight into useful guideline for the development of QD VECSEL technology, future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).
Keywords vertical-external-cavity surface-emitting lasers (VECSELs)      quantum dot (QD)      QD laser      quantum electrodynamics (QED)      cavity QED     
Corresponding Author(s): SHAN Guangcun,Email:guangcunshan@mail.sim.ac.cn   
Issue Date: 05 June 2012
 Cite this article:   
Guangcun SHAN,Xinghai ZHAO,Mingjun HU, et al. Vertical-external-cavity surface-emitting lasers and quantum dot lasers[J]. Front Optoelec, 2012, 5(2): 157-170.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0237-2
https://academic.hep.com.cn/foe/EN/Y2012/V5/I2/157
Fig.1  Schematic structure of semiconductor edge-emitting laser (a) and surface-emitting laser (b)
Fig.2  Schematic structure configration of VECSEL device (a) and QD VECSEL device (b)
Fig.3  Schematic illustration of quantum effects (density of states) from bulk, QW, quantum wire to QD
Fig.4  Schematic structure (a) and corresponding working mechanism (b) of single QD microdisk nanolaser, in which an atomic QD in a small-volume microdisk cavity with dephasing rate coupled to a cavity with photon loss rate by coupling strength . (c) Schematic illustration of the QD-PhC-nanocavity system considered, in which a single QD embedded in a PhC nanocavity
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