Position dependent circuit model for thin avalanche photodiodes

doi:10.1007/s12200-013-0314-1

Front Optoelec

2013, Vol. 6

Issue (2) : 194-198 https://doi.org/10.1007/s12200-013-0314-1

RESEARCH ARTICLE

Position dependent circuit model for thin avalanche photodiodes

Mohammad H. AKBARI, Mohsen JALALI(

)

School of Engineering, Shahed University, Tehran 3319118651, Iran

Download: PDF(266 KB) HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract

This paper presents a circuit model for thin avalanche photodiodes (APDs). In this model, the nonuniformity of the electric filed in the multiplication region is modeled using a stepwise method. The model also tries to take the effects of carrier’s position dependent properties, like carrier’s dead length and the history of carrier’s previous ionization into account by developing an effective electric field in the multiplication region. The output photocurrent and multiplication gain obtained from the proposed model for different lengths of the multiplication region achieve a good agreement in comparison with available experimental data. In addition, calculated excess noise factor reveals the model ability for noise and sensitivity analysis.

Keywords avalanche photodiode (APD) circuit modeling multiplication gain nonuniform electric field excess noise factor

Corresponding Author(s): JALALI Mohsen,Email:mjalali@shahed.ac.ir

Issue Date: 05 June 2013

Cite this article:

Mohammad H. AKBARI,Mohsen JALALI. Position dependent circuit model for thin avalanche photodiodes[J]. Front Optoelec, 2013, 6(2): 194-198.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-013-0314-1
https://academic.hep.com.cn/foe/EN/Y2013/V6/I2/194

Fig.1 Schematic diagram with electric field profile of a p-i-n avalanche photodiode (PIN-APD)

Fig.2 Equivalent circuit model for avalanche photodiodes based on multiplication gain calculation. (a) Calculating () and exp [-()]; (b) calculating ; (c) output terminal of the device

Tab.1 Parameters used in simulations

Fig.3 Multiplication gain as function of reverse bias voltage for homojunction GaAs APDs with i-region of = 100, 200 and 500 nm (solid-, dashed-, and doted-lines) compared to experimental data reported in Ref. []

Fig.4 Photocurrent as function of reverse bias voltage for homojunction InAlAs APDs with i-region of = 100, 200 and 500 nm (solid-, dashed-, and doted-lines) compared by experimental data presented in Ref. []

Fig.5 Comparison of simulation and experimental results of excess noise factor of a GaAs APDs [] for different thickness of i-region; = 100, 200, 500 and 800 nm

Fig.6 Comparison of simulation and experimental results of excess noise factor of an InAlAs APDs [8] for different thickness of i-region; = 190, 363 and 799 nm

1	Mai Y X, Wang G. Equivalent circuit modeling of separate absorption grading charge multiplication avalanche photodiode. Journal of Lightwave Technology , 27(9): 1197-1202
2	Wang G, Tokumitsu T, Hanawa I, Yoneda Y, Sato K, Kobayashi M. A time-delay equivalent-circuit model of ultrafast p-i-n photodiodes. IEEE Transactions on Microwave Theory and Techniques , 2003, 51(4): 1227-1233
3	Chen W, Liu S. PIN avalanche photodiodes model for circuit simulation. IEEE Journal of Quantum Electronics , 1996, 32(12): 2105-2111 doi: 10.1109/3.544756
4	Jou J J, Liu C K, Hsiao C M, Lin H H, Lee H C. Time-delay circuit model of high-speed pin photodiodes. IEEE Photonics Technology Letters , 2002, 14(4): 525-527 doi: 10.1109/68.992599
5	Banoushi A, Kardan M, Naeini M A. A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes. Solid-State Electronics , 2005, 49(6): 871-877 doi: 10.1016/j.sse.2005.03.014
6	Jalali M, Moravvej-Farshi M K, Masud-Panah S, Nabavi A. An equivalent lumped circuit model for thin avalanche photodiodes with nonuniform electric field profile. Journal of Lightwave Technology , 2010, 28(23): 3395-3402
7	Yuan P, Anselm K A, Hu C, Nie H, Lenox C, Holmes A L, Streetman B G, Campbell J C, McIntyre R J. A new look at impact ionization-Part II: gain and noise in short avalanche photodiodes. IEEE Transactions on Electron Devices , 1999, 46(8): 1632-1639 doi: 10.1109/16.777151
8	Saleh M A, Hayat M M, Sotirelis P P, Holmes A L, Campbell J C, Saleh B E A, Teich M C. Impact-ionization and noise characteristics of thin III-V avalanche photodiodes. IEEE Transactions on Electron Devices , 2001, 48(12): 2722-2731 doi: 10.1109/16.974696
9	Chuang S L. Physics of Optoelectronic Devices. Hoboken, New Jersey: John Wiley & Sons, 1995
10	McIntyre R J. A new look at impact ionization-Part I: a theory of gain, noise, breakdown probability, and frequency response. IEEE Transactions on Electron Devices , 1999, 46(8): 1623-1631 doi: 10.1109/16.777150
11	Goh Y L, Massey D J, Marshall A R J, Ng J S, Tan C H, Ng W K, Rees G J, Hopkinson M, David J P R, Jones S K. Avalanche multiplication in InAlAs. IEEE Transactions on Electron Devices , 2007, 54(1): 11-16 doi: 10.1109/TED.2006.887229

Viewed

Full text

Abstract

Cited

Shared

Discussed