SAGCM avalanche photodiode with additional layer and nonuniform electric field

doi:10.1007/s12200-013-0317-y

Front Optoelec

2013, Vol. 6

Issue (2) : 199-209 https://doi.org/10.1007/s12200-013-0317-y

RESEARCH ARTICLE

SAGCM avalanche photodiode with additional layer and nonuniform electric field

Abbas GHADIMI¹(

), Vahid AHMADI²(

), Fatemeh SHAHSHAHANI³(

)

1. Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran 145151775, Iran; 2. Department of Electrical Engineering, Tarbiat Modares University, Tehran 14115-194, Iran; 3. Department of Physics, Alzahra University, Tehran 1993893973, Iran

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Abstract

This paper presents a new method to increase the speed of the separated absorption, grading, charge, and multiplication avalanche photodiode (SAGCM-APD). This improvement is obtained by adding a new thin charge layer between absorption and grading layers, with assuming the non-uniform electric field in different regions of the structure. In addition, a circuit model of the proposed structure is extracted, using carrier rate equations. Also, to achieve the optimum structure, it is tried to have trade-offs among thickness of the layers and have proper tuning of physical parameters. Eventually, frequency and transient response are investigated and it is shown that, in comparison with the previous conventional structure, significant improvements in gain-bandwidth product, speed and also in breakdown voltage are attained.

Keywords separated absorption grading charge multiplication avalanche photodiode (SAGCM-APD) electric field nonuniformity additional charge layer

Corresponding Author(s): GHADIMI Abbas,Email:ghadimi555@yahoo.com; AHMADI Vahid,Email:v_ahmadi@modares.ac.ir; SHAHSHAHANI Fatemeh,Email:f_shahshahani@alzahra.ac.ir

Issue Date: 05 June 2013

Cite this article:

Abbas GHADIMI,Vahid AHMADI,Fatemeh SHAHSHAHANI. SAGCM avalanche photodiode with additional layer and nonuniform electric field[J]. Front Optoelec, 2013, 6(2): 199-209.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-013-0317-y
https://academic.hep.com.cn/foe/EN/Y2013/V6/I2/199

Fig.1 Schematic structure and electric field profile of APD

Fig.2 Electric field division with staircase approximation model

Fig.3 Circuit model of proposed structure

Tab.1 Some parameters of APD

Fig.4 Gaussian pulse response in various thicknesses of . The is 200 nm and is 60 nm

Fig.5 Step pulse response for various charge layer thicknesses ( = 200 nm, = 60 nm)

Fig.6 Inset of the curves in the zoomed region of Fig. 5

Fig.7 Bandwidth versus gain in various thicknesses of ( = 200 nm, = 60 nm)

Fig.8 Breakdown voltage based on different widths of multiplication layer

Fig.9 Changes of breakdown voltage in different thicknesses of C charge layer

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