Modelling overall transmitted efficiency at 1550 nm for polymer grating Silicon-on-insulator structure with defect

doi:10.1007/s12200-013-0321-2

Front Optoelec

2013, Vol. 6

Issue (2) : 153-159 https://doi.org/10.1007/s12200-013-0321-2

RESEARCH ARTICLE

Modelling overall transmitted efficiency at 1550 nm for polymer grating Silicon-on-insulator structure with defect

G. PALAI(

), T. K. DHIR, B. NATH, S. L. PATRA

Gandhi Institute for Technological Advancement (GITA), Bhubaneswar, Odisha 752054, India

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Abstract

The overall transmitted efficiency at 1550 nm for Nylon-Teflon/Teflon-Nylon (N-T/T-N) grating Silicon-on-insulator (SOI) structure with defect in even and odd position was investigated in this paper. Different types of losses, such as absorption, reflection and diffraction, were considered to find out the overall transmitted efficiency. The absorption loss of both Nylon-Teflon (N-T) and Teflon-Nylon (T-N) structure is zero at the wavelength of 1550 nm. Reflectance of these structures was analyzed by using plane wave expansion (PWE) method. Simulation result showed that reflectance as well as transmittance was varied linearly with respect to defect at odd and even positions. Simulation is also done for the diffraction efficiency at 1550 nm with respect to detuning from Bragg’s angle, which was ranged from -0.4 rad to+0.4 rad. Finally, it was found that overall transmitted efficiency increased as even defect position varied from 2nd to 10th for both N-T/T-N grating SOI structure. Similarly, the overall transmitted efficiency decreased as odd defect position changed from 3rd to 11th for both N-T/T-N grating SOI structure.

Keywords overall transmitted efficiency Nylon-Teflon/Teflon-Nylon?(N-T/T-N) grating plane wave expansion (PWE) Silicon-on-insulator (SOI)

Corresponding Author(s): PALAI G.,Email:gpalai28@gmail.com

Issue Date: 05 June 2013

Cite this article:

B. NATH,S. L. PATRA,G. PALAI, et al. Modelling overall transmitted efficiency at 1550 nm for polymer grating Silicon-on-insulator structure with defect[J]. Front Optoelec, 2013, 6(2): 153-159.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-013-0321-2
https://academic.hep.com.cn/foe/EN/Y2013/V6/I2/153

Fig.1 (a) N-T grating SOI structure having defect at the 2nd position; (b) T-N grating SOI structure having defect at the 3rd position

Fig.2 (a) Periodic N-T grating structure; (b) N-T grating structure having defect at the 2nd position; (c) N-T grating structure having defect at the 4th position; (d) N-T grating structure having defect at the 3rd position; (e) N-T grating structure having defect at the 5th position

Tab.1 Grating structure parameter

Fig.3 Reflectance graph of N-T grating SOI structure having defect (a) at the 2nd position and (b) at the 4th position

Fig.4 Reflectance/Transmittance with respect to even defect position, N-T grating

Fig.5 Variation of different efficiency with respect detuning angle of N-T grating structure having defect (a) at the 2nd position and (b) at the 4th position

Fig.6 Overall transmitted efficiency with respect to defect position (even) in N-T grating SOI structure

Fig.7 Overall transmitted efficiency with respect to defect position (odd) in N-T grating SOI structure

Fig.8 Overall transmitted efficiency of T-N grating SOI structure having defect at even position

Fig.9 Overall transmitted efficiency of T-N grating SOI structure having defect at odd positions

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